refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC212B/D
1
March, 2007 − Rev. 4
BC212B
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector−Emitter Leakage Current
Emitter−Base Leakage Current
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10
mAdc,
V
CE
= −5.0 Vdc)
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc) (Note 1)
Collector −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.5 mAdc)
(I
C
= −100 mAdc, I
B
= −5.0 mAdc) (Note 1)
Base −Emitter Saturation Voltage
(I
C
= −100 mAdc, I
B
= −5.0 mAdc)
Base−Emitter On Voltage
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc, f = 100 mHz)
Common−Base Output Capacitance
(V
CB
= −10 Vdc, I
C
= 0, f = 1.0 mHz)
Noise Figure
(I
C
= −0.2 mAdc, V
CE
= −5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, f = 200 Hz)
Small−Signal Current Gain
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc, f = 1.0 kHz)
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
f
T
C
ob
NF
h
fe
−
−
−
200
280
−
−
−
−
6.0
10
400
MHz
pF
dB
−
V
CE(sat)
−
−
V
BE(sat)
V
BE(on)
−
−0.6
−0.10
−0.25
−1.0
−0.62
−
−0.6
−1.4
−0.72
Vdc
Vdc
h
FE
40
60
−
−
−
120
−
−
−
Vdc
−
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Min
−50
−60
−5
−
−
Typ
−
−
−
−
−
Max
−
−
−
−15
−15
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
http://onsemi.com
2
BC212B
2.0
hFE, NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= −10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0.2
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
I
C
, COLLECTOR CURRENT (mAdc)
0
−0.1 −0.2
V
CE(sat)
@ I
C
/I
B
= 10
−0.5 −1.0 −2.0
−5.0 −10 −20
I
C
, COLLECTOR CURRENT (mAdc)
−50 −100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= −10 V
0.3
Figure 1. Normalized DC Current Gain
BANDWIDTH PRODUCT (MHz)
Figure 2. “Saturation” and “On” Voltages
400
300
C, CAPACITANCE (pF)
200
150
100
80
60
40
30
20
−0.5
−1.0
−2.0 −3.0 −5.0
−10
−20 −30
I
C
, COLLECTOR CURRENT (mAdc)
−50
V
CE
= −10 V
T
A
= 25°C
10
C
ib
7.0
5.0
T
A
= 25°C
3.0
C
ob
2.0
f T, CURRENT−GAIN
1.0
−0.4 −0.6
−1.0
−2.0
−4.0 −6.0 −10
V
R
, REVERSE VOLTAGE (VOLTS)
−20 −30 −40
Figure 3. Current−Gain − Bandwidth Product
Figure 4. Capacitances
0.5
0.3
V
CE
= −10 V
f = 1.0 kHz
T
A
= 25°C
r b
′
, BASE SPREADING RESISTANCE (OHMS)
1.0
hob, OUTPUT ADMITTANCE (OHMS)
150
140
130
V
CE
= −10 V
f = 1.0 kHz
T
A
= 25°C
0.1
0.05
0.03
120
110
0.01
−0.1
−0.2
−0.5
−1.0
−2.0
I
C
, COLLECTOR CURRENT (mAdc)
−5.0
−10
100
−0.1
−0.2 −0.3 −0.5
−1.0
−2.0 −3.0
I
C
, COLLECTOR CURRENT (mAdc)
−5.0
−10
Figure 5. Output Admittance
Figure 6. Base Spreading Resistance
http://onsemi.com
3
BC212B
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
B
STRAIGHT LEAD
BULK PACK
K
X X
G
H
V
1
D
J
C
SECTION X−X
N
N
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
K
X X
G
D
J
V
C
SECTION X−X
N
1
DIM
A
B
C
D
G
J
K
N
P
R
V
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
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