CY62136FV30 MoBL
®
2-Mbit (128 K × 16) Static RAM
2-Mbit (128 K × 16) Static RAM
Features
■
■
Functional Description
The CY62136FV30 is a high performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
®
) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption by 90 percent when addresses are not toggling.
Placing the device into standby mode reduces power
consumption by more than 99 percent when deselected (CE
HIGH). The input and output pins (I/O
0
through I/O
15
) are placed
in a high impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), both Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or
during a write operation (CE LOW and WE LOW).
Write to the device by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O
0
through I/O
7
) is written into the location
specified on the address pins (A
0
through A
16
). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O
8
through
I/O
15
) is written into the location specified on the address pins
(A
0
through A
16
).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appears on I/O
0
to I/O
7
. If
Byte High Enable (BHE) is LOW, then data from memory
appears on I/O
8
to I/O
15
. See the
Truth Table on page 11
for a
complete description of read and write modes.
For a complete list of related resources,
click here.
Very high speed: 45 ns
Temperature ranges
❐
Industrial: –40 °C to +85 °C
❐
Automotive-A: –40 °C to +85 °C
❐
Automotive-E: –40 °C to +125 °C
Wide voltage range: 2.20 V to 3.60 V
Pin compatible with CY62136V, CY62136CV30/CV33, and
CY62136EV30
Ultra low standby power
❐
Typical standby current: 1
A
❐
Maximum standby current: 5
A
(Industrial)
Ultra low active power
❐
Typical active current: 1.6 mA at f = 1 MHz (45 ns speed)
Easy memory expansion with CE and OE features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Available in Pb-free 48-ball very fine-pitch ball grid array
(VFBGA) and 44-pin thin small outline package (TSOP) II
packages
■
■
■
■
■
■
■
■
Logic Block Diagram
DATA IN DRIVERS
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ROW DECODER
128 K x 16
RAM Array
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN DECODER
A
11
A
12
A
13
A
14
A
15
A
16
BHE
WE
CE
OE
BLE
Cypress Semiconductor Corporation
Document Number: 001-08402 Rev. *N
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised October 27, 2015
CY62136FV30 MoBL
®
Contents
Product Portfolio .............................................................. 3
Pin Configuration ............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Ordering Information ...................................................... 12
Ordering Code Definitions ......................................... 12
Package Diagrams .......................................................... 13
Acronyms ........................................................................ 15
Document Conventions ................................................. 15
Units of Measure ....................................................... 15
Document History Page ................................................. 16
Sales, Solutions, and Legal Information ...................... 18
Worldwide Sales and Design Support ....................... 18
Products .................................................................... 18
PSoC® Solutions ...................................................... 18
Cypress Developer Community ................................. 18
Technical Support ..................................................... 18
Document Number: 001-08402 Rev. *N
Page 2 of 18
CY62136FV30 MoBL
®
Product Portfolio
Power Dissipation
Product
Range
V
CC
Range (V)
Min
CY62136FV30LL
Industrial/Auto-A
Auto-E
2.2
2.2
Typ
[1]
3.0
3.0
Max
3.6
3.6
45
55
Speed
(ns)
Operating I
CC
(mA)
f = 1 MHz
Typ
[1]
1.6
2
Max
2.5
3
f = f
max
Typ
[1]
13
15
Max
18
25
Standby I
SB2
(A)
Typ
[1]
1
1
Max
5
20
Pin Configuration
Figure 1. 48-ball VFBGA pinout
[2, 3]
1
BLE
I/O
8
I/O
9
2
OE
BHE
I/O
10
3
A
0
A
3
A
5
NC
NC
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
NC
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
NC
A
B
C
D
E
F
G
H
Figure 2. 44-pin TSOP II pinout
[2]
A
4
A
3
A
2
A
1
A
0
CE
I/O
0
I/O
1
I/O
2
I/O
3
V
CC
V
SS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
16
A
15
A
14
A
13
A
12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
BHE
BLE
I/O
15
I/O
14
I/O
13
I/O
12
V
SS
V
CC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
8
A
9
A
10
A
11
NC
V
SS
I/O
11
V
CC
I/O
12
I/O
14
I/O
13
A
14
I/O
15
NC
NC
A
8
A
12
A
9
Notes
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
2. NC pins are not connected on the die.
3. Pins D3, H1, G2, H6 and H3 in the VFBGA package are address expansion pins for 4 Mb, 8 Mb, 16 Mb, and 32 Mb and 64 Mb respectively.
Document Number: 001-08402 Rev. *N
Page 3 of 18
CY62136FV30 MoBL
®
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Supply voltage
to ground potential
[4, 5]
... –0.3 V to 3.9 V (V
CC(max)
+ 0.3 V)
DC voltage applied to outputs
in High Z State
[4, 5]
.......... –0.3 V to 3.9 V (V
CC(max)
+ 0.3 V)
DC input voltage
[4, 5]
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(MIL-STD-883, Method 3015) ................................ > 2001 V
Latch up current ..................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
V
CC
[6]
CY62136FV30LL Industrial/
Auto-A
Auto-E
–40 °C to +85 °C 2.2 V to 3.6 V
–40 °C to +125 °C
....... –0.3 V to 3.9 V (V
CC(max)
+ 0.3 V)
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output high voltage
Output low voltage
Input high voltage
Input low voltage
Input leakage current
V
CC
operating supply
current
Test Conditions
2.2 < V
CC
< 2.7 I
OH
= –0.1 mA
2.7 < V
CC
< 3.6 I
OH
= –1.0 mA
2.2 < V
CC
< 2.7 I
OL
= 0.1 mA
2.7 < V
CC
< 3.6 I
OL
= 2.1 mA
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
GND < V
I
< V
CC
f = f
max
= 1/t
RC
f = 1 MHz
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
Output leakage current GND < V
O
< V
CC
, Output disabled
-45 (Industrial/Auto-A)
Min
2.0
2.4
–
–
1.8
2.2
–0.3
–0.3
–1
–1
–
–
–
Typ
[7]
–
–
–
–
–
–
–
–
–
–
13
1.6
1
Max
–
–
0.4
0.4
V
CC
+ 0.3
V
CC
+ 0.3
0.6
0.8
+1
+1
18
2.5
5
Min
2.0
2.4
–
–
1.8
2.2
–0.3
–0.3
–4
–4
–
–
–
-55 (Auto-E)
Typ
[7]
–
–
–
–
–
–
–
–
–
–
15
2
1
Max
–
–
0.4
0.4
V
CC
+ 0.3
V
CC
+ 0.3
0.6
0.8
+4
+4
25
3
20
A
Unit
V
V
V
V
V
V
V
V
A
A
mA
I
SB1[8]
CE > V
CC
–0.2 V,
Automatic CE power
down current — CMOS V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V,
inputs
f = f
max
(Address and data only),
f = 0 (OE, WE, BHE, and BLE),
V
CC
= 3.60 V
CE > V
CC
– 0.2 V,
Automatic CE power
down current — CMOS V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
inputs
f = 0, V
CC
= 3.60 V
I
SB2 [8]
–
1
5
–
1
20
A
Notes
4. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
5. V
IH(max)
=V
CC
+ 0.75 V for pulse durations less than 20 ns.
6. Full device AC operation assumes a minimum of 100
s
ramp time from 0 to V
CC(min)
and 200
s
wait time after V
CC
stabilization.
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
8. Chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
SB1
/ I
SB2
/ I
CCDR
specification. Other inputs can be left floating.
Document Number: 001-08402 Rev. *N
Page 4 of 18
CY62136FV30 MoBL
®
Capacitance
Parameter
[9]
C
IN
C
OUT
Description
Input capacitance
Output capacitance
Test Conditions
T
A
= 25 °C, f = 1 MHz, V
CC
= V
CC(typ)
Max
10
10
Unit
pF
pF
Thermal Resistance
Parameter
[9]
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Still air, soldered on a 3 × 4.5 inch, two
layer printed circuit board
48-ball VFBGA 44-pin TSOP II Unit
75
10
77
13
C/W
C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
V
CC
OUTPUT
R1
V
CC
30 pF
INCLUDING
JIG AND
SCOPE
R2
10%
GND
Rise Time = 1 V/ns
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
R
TH
OUTPUT
V
Parameters
R1
R2
R
TH
V
TH
2.5 V (2.2 V to 2.7 V)
16667
15385
8000
1.20
3.0 V (2.7 V to 3.6 V)
1103
1554
645
1.75
Unit
V
Note
9. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 001-08402 Rev. *N
Page 5 of 18
京公网安备 11010802033920号
EEWORLD
