CY62136FV30LL-45ZSXIT datasheet, PDF

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CY62136FV30LL-45ZSXIT: DescriptionSRAM 2Mb 3V 45ns 128K x 16 LP SRAM; Categorystorage; File Size466KB，18 Pages; ManufacturerCypress Semiconductor

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CY62136FV30LL-45ZSXIT Overview

SRAM 2Mb 3V 45ns 128K x 16 LP SRAM

CY62136FV30LL-45ZSXIT Parametric

Parameter Name	Attribute value
Product Category	SRAM
Manufacturer	Cypress Semiconductor
RoHS	Details
Memory Size	2 Mbit
Organization	128 k x 16
Access Time	45 ns
Interface Type	Parallel
Supply Voltage - Max	3.6 V
Supply Voltage - Min	2.2 V
Supply Current - Max	18 mA
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Mounting Style	SMD/SMT
Package / Case	TSOP-44
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Data Rate	SDR
Memory Type	SDR
Moisture Sensitive	Yes
Number of Ports	1
Operating Temperature Range	- 40 C to + 85 C
Factory Pack Quantity	1000
Type	Asynchronous

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CY62136FV30 MoBL

2-Mbit (128 K × 16) Static RAM

Features

■

Functional Description

The CY62136FV30 is a high performance CMOS static RAM

organized as 128K words by 16 bits. This device features

advanced circuit design to provide ultra low active current. This

is ideal for providing More Battery Life™ (MoBL

) in portable

applications such as cellular telephones. The device also has an

automatic power down feature that significantly reduces power

consumption by 90 percent when addresses are not toggling.

Placing the device into standby mode reduces power

consumption by more than 99 percent when deselected (CE

HIGH). The input and output pins (I/O

through I/O

) are placed

in a high impedance state when the device is deselected (CE

HIGH), the outputs are disabled (OE HIGH), both Byte High

Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or

during a write operation (CE LOW and WE LOW).

Write to the device by taking Chip Enable (CE) and Write Enable

(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data

from I/O pins (I/O

through I/O

) is written into the location

specified on the address pins (A

through A

). If Byte High

Enable (BHE) is LOW, then data from I/O pins (I/O

through

I/O

) is written into the location specified on the address pins

through A

Read from the device by taking Chip Enable (CE) and Output

Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If

Byte Low Enable (BLE) is LOW, then data from the memory

location specified by the address pins appears on I/O

to I/O

. If

Byte High Enable (BHE) is LOW, then data from memory

appears on I/O

to I/O

. See the

Truth Table on page 11

for a

complete description of read and write modes.

For a complete list of related resources,

click here.

Very high speed: 45 ns

Temperature ranges

❐

Industrial: –40 °C to +85 °C

❐

Automotive-A: –40 °C to +85 °C

❐

Automotive-E: –40 °C to +125 °C

Wide voltage range: 2.20 V to 3.60 V

Pin compatible with CY62136V, CY62136CV30/CV33, and

CY62136EV30

Ultra low standby power

❐

Typical standby current: 1

A

❐

Maximum standby current: 5

A

(Industrial)

Ultra low active power

❐

Typical active current: 1.6 mA at f = 1 MHz (45 ns speed)

Easy memory expansion with CE and OE features

Automatic power down when deselected

Complementary metal oxide semiconductor (CMOS) for

optimum speed and power

Available in Pb-free 48-ball very fine-pitch ball grid array

(VFBGA) and 44-pin thin small outline package (TSOP) II

packages

■

Logic Block Diagram

DATA IN DRIVERS

ROW DECODER

128 K x 16

RAM Array

SENSE AMPS

I/O

–I/O

I/O

–I/O

COLUMN DECODER

BHE

BLE

Cypress Semiconductor Corporation

Document Number: 001-08402 Rev. *N

•

198 Champion Court

•

San Jose

CA 95134-1709

•

408-943-2600

Revised October 27, 2015

CY62136FV30LL-45ZSXIT Related Products

	CY62136FV30LL-45ZSXIT	CY62136FV30LL-45BVXIT
Description	SRAM 2Mb 3V 45ns 128K x 16 LP SRAM	SRAM 2Mb 3V 45ns 128K x 16 LP SRAM
Packaging	Reel	Reel
Product Category	SRAM	SRAM
Manufacturer	Cypress Semiconductor	Cypress Semiconductor
RoHS	Details	Details
Memory Size	2 Mbit	2 Mbit
Organization	128 k x 16	128 k x 16
Access Time	45 ns	45 ns
Interface Type	Parallel	Parallel
Supply Voltage - Max	3.6 V	3.6 V
Supply Voltage - Min	2.2 V	2.2 V
Supply Current - Max	18 mA	18 mA
Minimum Operating Temperature	- 40 C	- 40 C
Maximum Operating Temperature	+ 85 C	+ 85 C
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TSOP-44	VFBGA-48
Data Rate	SDR	SDR
Memory Type	SDR	SDR
Number of Ports	1	1
Operating Temperature Range	- 40 C to + 85 C	- 40 C to + 85 C
Factory Pack Quantity	1000	2000
Type	Asynchronous	Asynchronous

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