NTE5728
Powerblock Module
Description:
The NTE5728 uses high voltage power thyristors/diodes and is electrically isolated from the metal
base, allowing common heatsinks and compact assemblies to be built. This device is intended for
general purpose applications such as battery chargers, welders and plating equipment and where
high voltage and high current are required.
Features:
D
High Voltage
D
Electrically Isolated Base Plate
D
3000V
RMS
Isolating Voltage
D
High Surge Capability
D
Large Creepage Distances
Ratings and Characteristics:
Average Forward Current (T
C
= +85°C, 180° Conduction, Half Sine Wave), I
F(AV)
. . . . . . . . . . 250A
Maximum RMS On–State Current (As AC Switch), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555A
Maximum Repetitive Peak Reverse and Off–State Blocking Voltage, V
RRM
, V
DRM
. . . . . . . . 1600V
Maximum Non–Repetitive Peak Reverse Voltage, V
RSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Maximum Peak Reverse and Off–State Leakage Current (T
J
= +130°C), I
RRM
, I
DRM
. . . . . . 50mA
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), V
ISO
. . . . . . . . 3000V
Critical Rate of Rise of Off–State Voltage (T
J
= +130°C), dv/dt
(Linear to 80% Rated V
DRM
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V/µs
(Linear to 67% Rated V
DRM
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +130°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case (Per Junction, DC Operation), R
thJC
. . . . . . . . . 0.125°C/W
Thermal Resistance, Case–to–Sink (Per Module, Note 1), R
thCS
. . . . . . . . . . . . . . . . . . . . 0.02°C/W
Note 1. Mounting surface flat, smooth and greased.
Electrical Specifications:
Parameter
Maximum Peak One–Cycle
Non–Repetitive Surge Current
Symbol
I
FSM
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Maximum I
2
t for Fusing
I
2
t
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Maximum I
2
pt
Threshold Voltage, Low level
Threshold Voltage, High level
On–State Slope Resistance, Low Level
On–State Slope Resistance, High Level
Maximum On–State Voltage Drop
Maximum Holding Current
Maximum Latching Current
Maximum Peak Gate Power
Maximum Average Gate Power
Maximum Peak Gate Current
Maximum Peak Negative Gate Voltage
Maximum Required DC Gate Trigger
Voltage to Trigger
I
2
pt
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
P
GM
P
G(AV)
+I
GM
–V
GT
V
GT
Test Conditions
Sinusoidal Half Wave, 100% V
RRM
Reapplied, Initial T
J
= +130°C
°
Sinusoidal Half Wave, No Voltage
Reapplied, Initial T
J
= +130°C
°
Sinusoidal Half Wave, 100% V
RRM
Reapplied, Initial T
J
= +130°C
°
Sinusoidal Half Wave, No Voltage
Reapplied, Initial T
J
= +130°C
°
Rating
7150
7500
8500
8900
255
233
361
330
3610
0.97
1.00
0.60
0.57
1.44
500
1000
10
2.0
3.0
5.0
4.0
3.0
2.0
Anode Supply = 12V,
Resistive Load: R
A
= 1Ω
Ω
350
200
100
0.25
10
500
1.0
2.0
Unit
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A
2
pt
V
V
mΩ
mΩ
V
mA
mA
W
W
A
V
V
V
V
mA
mA
mA
V
mA
A/µs
µs
µs
µs
t = 0.1 to 10ms, no voltage reapplied
T
J
= +130°C, (16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
)
T
J
= +130°C, (π x I
T(AV)
< I < 20 x
π
x I
T(AV)
)
T
J
= +130°C, (16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
)
T
J
= +130°C, (π x I
T(AV)
< I < 20 x
π
x I
T(AV)
)
T
J
= +130°C, I
TM
=
π
x I
T(AV)
, 180° Condition,
Av. Power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
Anode Supply = 12V, Initial I
T
= 30A, T
J
= +25°C
Anode Supply = 12V, Resistive Load = 1Ω,
Gat Pulse: 10V, 100µs, T
J
= +25°C
T
J
= +130°C, t
p
≤
5ms
T
J
= +130°C, f = 50Hz
T
J
= +130°C, t
p
≤
5ms
T
J
= +130°C, t
p
≤
5ms
T
J
= –40°C
T
J
= +25°C
T
J
= +130°C
Anode Supply = 12V,
Resistive Load: R
A
= 1Ω
Ω
Maximum Required DC Gate Trigger
Current to Trigger
I
GT
T
J
= –40°C
T
J
= +25°C
T
J
= +130°C
Maximum Gate Voltage that will not
Trigger
Maximum Gate Current that will not
Trigger
Maximum Rate of Rise of
Turned–On Current
Typical Delay Time
Typical Rise Time
Typical Turn–Off Time
V
GD
I
GD
di/dt
t
d
t
r
t
q
T
J
= +130°C, Rated V
DRM
Applied
T
J
= +130°C, Rated V
DRM
Applied
T
J
= +130°C, I
TM
= 400A, Rated V
DRM
Applied
T
J
= +25°C, Gate Current = 1A di
G
/dt = 1A/µs,
V
D
= 0.67% V
DRM
T
J
= +25°C, I
TM
= 300A, –dI/dt = 15A/µs, V
R
= 50V, 50–150
dV/dt = 20V/µs, Gate 0V, 100Ω
Microchip MCU
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