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MBRB1645T4G

CategoryDiscrete semiconductor    diode   
File Size60KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MBRB1645T4G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-263
package instructionR-PSSO-G2
Contacts3
Manufacturer packaging code418B-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Is SamacsysN
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.57 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current16 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage45 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Base Number Matches1
MBR1635, MBR1645,
MBRB1645, NRVBB1645
Switch Mode
Power Rectifiers
16 A, 35 and 45 V
These state−of−the−art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
http://onsemi.com
MARKING
DIAGRAMS
TO−220AC
CASE 221B
PLASTIC
Guard−ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
1
3
A
Y
WW
B16x5
x
KA
G
3
4
AYWWG
B16x5
KA
1, 4
Case: Epoxy, Molded
Weight: 1.9 Grams for TO−220
1.7 Grams for
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR1635
MBR1645
MBRB1645
Average Rectified Forward Current Delay
(Rated V
R
, T
C
= 163°C) Total Device
Peak Repetitive Forward Current, Per
Leg
(Rated V
R
, Square Wave,
20 kHz, T
C
= 157°C) Total Device
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current
(2.0
ms,
1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
Value
Unit
V
1
35
45
45
A
16
I
FRM
32
A
D
2
PAK
= Assembly Location
= Year
= Work Week
= Device Code
= 3 or 4
= Diode Polarity
= Pb−Free Package
4
D
2
PAK
CASE 418B
STYLE 3
B1645G
AYWW
3
1
4
3
B1645
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
I
F(AV)
I
FSM
150
A
ORDERING INFORMATION
Device
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
50 Units / Rail
I
RRM
T
stg
T
J
dv/dt
1.0
−65 to +175
−65 to +175
10,000
A
°C
°C
V/ms
MBR1635G
MBR1645G
MBRB1645T4G
NRVBB1645T4G
50 Units / Rail
800 Units / Rail
800 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
©
Semiconductor Components Industries, LLC, 2014
1
April, 2014 − Rev. 12
Publication Order Number:
MBR1635/D

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