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BFG520-X215

Description
ESD Suppressors / TVS Diodes TVS DIODE 28.3V @ 11A
Categorysemiconductor    Discrete semiconductor   
File Size312KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BFG520-X215 Overview

ESD Suppressors / TVS Diodes TVS DIODE 28.3V @ 11A

BFG520-X215 Parametric

Parameter NameAttribute value
Product CategoryRF Bipolar Transistors
ManufacturerNXP
RoHSDetails
Transistor TypeBipolar
TechnologySi
Transistor PolarityNPN
DC Collector/Base Gain hfe Min60
Collector- Emitter Voltage VCEO Max15 V
Emitter- Base Voltage VEBO2.5 V
Continuous Collector Current70 mA
Maximum Operating Temperature+ 175 C
ConfigurationDual
Mounting StyleSMD/SMT
Package / CaseSOT-143
PackagingReel
Collector- Base Voltage VCBO20 V
DC Current Gain hFE Max60 at 20 mA at 6 V
Gain Bandwidth Product fT9000 MHz
Height1 mm (Max)
Length3 mm (Max)
Maximum DC Collector Current0.07 A
Minimum Operating Temperature- 65 C
Pd - Power Dissipation300 mW
Factory Pack Quantity3000
TypeRF Bipolar Small Signal
Width1.4 mm (Max)
BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Rev. 04 — 23 November 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors

BFG520-X215 Related Products

BFG520-X215 BFG520235 BFG520-XR215 BFG520-XR235
Description ESD Suppressors / TVS Diodes TVS DIODE 28.3V @ 11A RF Bipolar Transistors Single NPN 15V 70mA 300mW 60 9GHz RF Bipolar Transistors TAPE-7 TNS-RFSS RF Bipolar Transistors Single NPN 15V 70mA 300mW 60 9GHz
Product Category RF Bipolar Transistors RF Bipolar Transistors RF Bipolar Transistors RF Bipolar Transistors
Manufacturer NXP NXP NXP NXP
RoHS Details Details Details Details
Transistor Type Bipolar Bipolar Bipolar Bipolar
Technology Si Si Si Si
Transistor Polarity NPN NPN NPN NPN
DC Collector/Base Gain hfe Min 60 60 60 60
Collector- Emitter Voltage VCEO Max 15 V 15 V 15 V 15 V
Emitter- Base Voltage VEBO 2.5 V 2.5 V 2.5 V 2.5 V
Continuous Collector Current 70 mA 70 mA 70 mA 70 mA
Configuration Dual Single Dual Single
Mounting Style SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Package / Case SOT-143 SOT-143B SOT-143 SOT-143R
DC Current Gain hFE Max 60 at 20 mA at 6 V 250 60 at 20 mA at 6 V 250
Pd - Power Dissipation 300 mW 300 mW 300 mW 300 mW
Factory Pack Quantity 3000 10000 3000 10000
Type RF Bipolar Small Signal RF Bipolar Small Signal RF Bipolar Small Signal RF Bipolar Small Signal
Packaging Reel Reel Reel Reel
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