CS30-16io1
Thyristor
V
RRM
I
TAV
V
T
=
=
=
1600 V
30 A
1,3 V
Single Thyristor
Part number
CS30-16io1
Backside: anode
2
3
1
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
TO-247
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
© 2015 IXYS all rights reserved
CS30-16io1
Thyristor
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
T
VJ
= 150 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
1700
V
1600
50
2
1,30
1,63
1,30
1,71
30
47
0,87
14,2
0,25
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 150 °C
16
10
5
0,5
T
VJ
= 125 °C; f = 50 Hz
repetitive, I
T
=
t
P
= 200 µs; di
G
/dt = 0,3 A/µs;
I
G
=
0,3 A; V =
⅔
V
DRM
non-repet., I
T
=
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
I
G
=
10 µs
0,3 A; di
G
/dt =
0,3 A/µs
T
VJ
= 25 °C
T
VJ
= 25 °C
0,3 A/µs
150
µs
20 V/µs t
p
= 200 µs
100
2
mA
µs
90 A
30 A
250
400
430
340
365
800
770
580
555
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
W
W
W
V
R/D
= 1600 V
V
R/D
= 1600 V
I
T
=
I
T
=
I
T
=
I
T
=
30 A
60 A
30 A
60 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 120 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0,5 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
500 A/µs
1000 V/µs
1
1,2
55
80
0,2
5
150
V
V
mA
mA
V
mA
mA
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 125°C
T
VJ
= 25 °C
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
=
0,3 A; di
G
/dt =
turn-off time
V
R
= 100 V; I
T
= 30 A; V =
⅔
V
DRM
T
VJ
=125 °C
di/dt = 15 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
© 2015 IXYS all rights reserved
CS30-16io1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
70
150
125
150
Unit
A
°C
°C
°C
g
Nm
N
6
0,8
20
1,2
120
Product Marking
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
XXXXXXXXX
Zyyww
abcd
Ordering
Standard
Ordering Number
CS30-16io1
Marking on Product
CS30-16io1
Delivery Mode
Tube
Quantity
30
Code No.
466581
Similar Part
CS30-12io1
CS30-14io1
Package
TO-247AD (3)
TO-247AD (3)
Voltage class
1200
1400
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0,87
11,7
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
© 2015 IXYS all rights reserved
CS30-16io1
Outlines TO-247
E
Q
A
A2
S
D1
D
2x
E2
Ø
P
Ø
P1
D2
Sym.
Inches
min.
max.
Millimeter
min.
max.
4
1
L1
L
2
3
E1
2x
b2
3x
b
C
A1
b4
2x
e
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
0.780 0.800
-
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
-
0.020 0.053
0.530
-
-
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
5.46 BSC
19.80 20.30
-
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
-
0.51
1.35
13.45
-
-
7.39
2
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
© 2015 IXYS all rights reserved
CS30-16io1
Thyristor
80
400
350
60
300
T
VJ
= 45°C
50 Hz, 80% V
RRM
1000
V
R
= 0 V
I
T
[A]
I
TSM
40
250
It
T
VJ
= 45°C
T
VJ
= 125°C
2
[A]
200
20
125°C
150°C
T
VJ
= 25°C
1,0
1,5
2,0
150
100
0,01
[A
2
s]
T
VJ
= 125°C
0
0,5
100
0,1
1
1
2
2
3
4 5 6 7 8 910
V
T
[V]
Fig. 1 Forward characteristics
t [s]
Fig. 2 Surge overload current
t [ms]
Fig. 3 I t versus time (1-10 ms)
10
1: I
GD
, T
VJ
= 150°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
1000
80
dc =
1
0.5
0.4
0.33
0.17
0.08
6
60
100
V
G
1
23
1
4
5
t
gd
[µs]
10
typ.
Limit
I
T(AV)M
40
[V]
[A]
T
VJ
= 125°C
20
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
0,1
1
10
100
1000
10000
1
10
0
100
1000
0
25
50
75
100 125 150
I
G
[mA]
Fig. 4 Gate trigger characteristics
I
G
[mA]
Fig. 5 Gate controlled delay time
T
C
[°C]
Fig. 6 Max. forward current
at case temperature
60
P
(AV)
[W]
dc =
1
50 0.5
0.4
0.33
40 0.17
0.08
30
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
0,6
0,4
Z
thJC
[K/W]
0,2
R
thi
[K/W]
0.08
0.06
0.2
0.05
0.11
10
1
10
2
10
3
t
i
[s]
0.01
0.0001
0.02
0.2
0.11
10
4
20
10
0
0
10
20
30
40
0
50
100
150
0,0
10
0
I
T(AV)
[A]
T
amb
[°C]
t [ms]
Fig. 8 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
© 2015 IXYS all rights reserved
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