NTE5562, NTE5564, NTE5566
Silicon Controlled Rectifiers (SCR’s)
Description:
The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO–48 isolated stud
TO–48 type package designed for industrial and consumer applications such as power supplies, bat-
tery chargers, temperature, motor, light and welder controls.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage & Reverse Voltage (T
J
= +100°C), V
DRM
, V
RRM
NTE5562 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
NTE5564 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5566 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (T
C
= +75°C), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Peak Surge (Non–Repetitive) On–State Current, I
TSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A
Peak Gate–Trigger Current (3µs Max), I
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Peak Gate–Power Dissipation (I
GT
≤
for 3µs Max), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power Dissipation, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Temperature Range, T
oper
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6/W
Electrical Characteristics:
(At Maximum Ratings and Specified Case Temperatures)
Parameter
Peak Off–State Current
Maximum On–State Voltage (Peak)
DC Holding Current
DC Gate Trigger Current
DC Gate Controlled Turn–On Time
Critical Rate of Rise of Off–State Voltage
Symbol
I
DRM
,
I
RRM
V
TM
I
HO
I
GT
T
GT
Critical
dv/dt
Test Conditions
T
J
= +100°C, Gate Open, V
DRM
&V
RRM
T
C
= +25°C
T
C
= +25°C, Gate Open
Anode Voltage = 12Vdc, R
L
= 30Ω,
T
C
=+ 25°C
I
GT
= 150mA , t
D
+t
R
T
C
= +100°C, Gate Open
Min
–
–
–
–
–
–
Typ
–
–
–
–
2.5
100
Max Unit
2.0
1.6
50
30
–
–
mA
V
mA
mA
µs
V/µs
ADI Reference Circuit
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