NTE5517 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Analog mixed-signal IC> Trigger device> NTE5517

NTE5517: DescriptionSilicon Controlled Rectifier (SCR); CategoryAnalog mixed-signal IC Trigger device; File Size17KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com; Environmental Compliance

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NTE5517 Overview

Silicon Controlled Rectifier (SCR)

NTE5517 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NTE
package instruction	PRESS FIT, O-MUPF-D2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ANODE
Configuration	SINGLE
Maximum DC gate trigger current	25 mA
Maximum DC gate trigger voltage	2 V
Maximum holding current	50 mA
JEDEC-95 code	TO-48
JESD-30 code	O-MUPF-D2
On-state non-repetitive peak current	300 A
Number of components	1
Number of terminals	2
Maximum on-state current	35000 A
Package body material	METAL
Package shape	ROUND
Package form	PRESS FIT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	35 A
Off-state repetitive peak voltage	200 V
Repeated peak reverse voltage	200 V
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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NTE5517 thru NTE5519

Silicon Controlled Rectifier (SCR)

Absolute Maximum Ratings:

Repetitive Peak Off–State Voltage (T

= +100°C), V

DRM

NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE5518 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

NTE5519 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

Repetitive Peak Reverse Voltage (T

= +100°C), V

RRM

NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE5518 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

NTE5519 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

RMS On–State Current (T

= +75°C), I

T(RMS)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A

Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), I

TSM

. . . . . . . . . 350A

Peak Gate–Trigger Current (3µs Max), I

GTM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A

Peak Gate–Power Dissipation (I

≤

GTM

for 3µs Max), P

. . . . . . . . . . . . . . . . . . . . . . . . . . . 20W

Average Gate–Power Dissipation, P

G(AV)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W

Operating Temperatue Range, T

opr

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C

Typical Thermal Resistance, Junction–to–Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9°C/W

Electrical Characteristics:

(At Maximum Ratings and Specified Case Temperatures)

Parameter

Peak Off–State Current

Maximum On–State Voltage (Peak)

Peak On–State Current

DC Holding Current

DC Gate–Trigger Current

DC Gate–Trigger Voltage

Gate Controlled Turn–On Time

Critical Rate–of–Rise of

Off–State Voltage

Symbol

DRM

RRM

Critical

dv/dt

= +25°C, Gate Open

Anode Voltage = 12V, R

= 30Ω, T

= +25°C

Anode Voltage = 12V, R

= 30Ω, T

= +25°C

+ t

, I

= 150mA

= +100°C, Gate Open

Test Conditions

= +100°C, Gate Open,

DRM

and V

RRM

= Max. Rating

= +25°C

Min

–

Typ

–

2.5

100

Max Unit

2.0

1.6

2.0

–

µs

V/µs

NTE5517 Related Products

	NTE5517	NTE5519	NTE5516	NTE5514
Description	Silicon Controlled Rectifier (SCR)	Silicon Controlled Rectifier (SCR)	Silicon Controlled Rectifier (SCR)	Silicon Controlled Rectifier (SCR)
Maker	NTE	NTE	NTE	NTE
package instruction	PRESS FIT, O-MUPF-D2	PRESS FIT, O-MUPF-D2	PRESS FIT, O-MUPF-D2	PRESS FIT, O-MUPF-D2
Reach Compliance Code	unknow	unknow	unknow	unknow
Shell connection	ANODE	ANODE	ANODE	ANODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	25 mA	25 mA	25 mA	25 mA
Maximum DC gate trigger voltage	2 V	2 V	2 V	2 V
Maximum holding current	50 mA	50 mA	20 mA	20 mA
JESD-30 code	O-MUPF-D2	O-MUPF-D2	O-MUPF-D2	O-MUPF-D2
On-state non-repetitive peak current	300 A	300 A	200 A	200 A
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Maximum on-state current	35000 A	35000 A	20000 A	20000 A
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	PRESS FIT	PRESS FIT	PRESS FIT	PRESS FIT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	35 A	35 A	20 A	20 A
Off-state repetitive peak voltage	200 V	600 V	600 V	200 V
Repeated peak reverse voltage	200 V	600 V	600 V	200 V
surface mount	NO	NO	NO	NO
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG
Terminal location	UPPER	UPPER	UPPER	UPPER
Trigger device type	SCR	SCR	SCR	SCR

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