NTE5517 thru NTE5519
Silicon Controlled Rectifier (SCR)
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (T
J
= +100°C), V
DRM
NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5518 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5519 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Reverse Voltage (T
J
= +100°C), V
RRM
NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5518 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5519 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (T
C
= +75°C), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), I
TSM
. . . . . . . . . 350A
Peak Gate–Trigger Current (3µs Max), I
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak Gate–Power Dissipation (I
GT
≤
I
GTM
for 3µs Max), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate–Power Dissipation, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Operating Temperatue Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Typical Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9°C/W
Electrical Characteristics:
(At Maximum Ratings and Specified Case Temperatures)
Parameter
Peak Off–State Current
Maximum On–State Voltage (Peak)
Peak On–State Current
DC Holding Current
DC Gate–Trigger Current
DC Gate–Trigger Voltage
Gate Controlled Turn–On Time
Critical Rate–of–Rise of
Off–State Voltage
Symbol
I
DRM
,
I
RRM
V
TM
I
TM
I
H
I
GT
V
GT
t
gt
Critical
dv/dt
T
C
= +25°C, Gate Open
Anode Voltage = 12V, R
L
= 30Ω, T
C
= +25°C
Anode Voltage = 12V, R
L
= 30Ω, T
C
= +25°C
t
d
+ t
r
, I
GT
= 150mA
T
C
= +100°C, Gate Open
Test Conditions
T
J
= +100°C, Gate Open,
V
DRM
and V
RRM
= Max. Rating
T
C
= +25°C
Min
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
2.5
100
Max Unit
2.0
1.6
70
50
25
2.0
–
–
mA
V
A
mA
mA
V
µs
V/µs
Embedded System
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