Si5475BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
- 12
±8
- 6
a
- 6
a
- 7.7
b,c
- 6.2
b,c
- 20
- 5.2
- 1.3
b,c
6.3
4
2.5
b,c
1.6
b,c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
I
DM
I
S
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Foot (Drain)
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
40
15
Maximum
50
20
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The 1206 ChipFET is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 95 °C/W.
Document Number: 73381
S-83054-Rev. D, 29-Dec-08
www.vishay.com
1
Si5475BDC
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 6.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 6.2 A, V
GS
= 0 V
- 0.9
45
27
15
30
T
C
= 25 °C
- 5.2
- 20
- 1.2
70
42
A
V
ns
nC
ns
b
a
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Condition
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
≤
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 5.6 A
V
GS
= - 2.5 V, I
D
= - 4.7 A
V
GS
= - 1.8 V, I
D
= - 1.9 A
V
DS
= - 6 V, I
D
= - 6.9 A
Min.
- 12
Typ.
Max.
Unit
V
-7
2.5
- 0.45
- 1.0
± 100
-1
-5
- 20
0.023
0.032
0.044
22
1400
0.028
0.039
0.054
mV/°C
V
nA
µA
A
Ω
S
V
DS
= - 6 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 6 V, V
GS
= - 8 V, I
D
= - 6 A
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 6 A
f = 1 MHz
V
DD
= - 6 V, R
L
= 0.97
Ω
I
D
≅
- 6.2 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
370
260
26
15.5
2.1
4.0
9
10
38
62
70
5
15
60
95
105
10
25
100
110
40
24
pF
nC
Ω
ns
V
DD
= - 6 V, R
L
= 0.97
Ω
I
D
≅
- 6.2 A, V
GEN
= - 8 V, R
g
= 1
Ω
15
65
72
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 73381
S-83054-Rev. D, 29-Dec-08
Si5475BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS
20
V
GS
= 5 thru 2
V
16
I
D
-
Drain Current (A)
I
D
- Drain Current (A)
8
25 °C, unless otherwise noted
10
12
6
8
1.5
V
4
1
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4
T
C
= 125 °C
2
25 °C
- 55 °C
0
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
-
Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.12
2100
1800
Transfer Characteristics
0.10
R
DS(on)
-
On-Resistance (Ω)
C - Capacitance (pF)
C
iss
0.08
1500
1200
900
600
300
0
0
4
8
12
16
20
0
2
4
6
8
10
12
C
rss
C
oss
0.06
V
GS
= 1.8
V
V
GS
= 2.5
V
0.04
0.02
V
GS
= 4.5
V
0.00
I
D
-
Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
8
7
I
D
= 7.7 A
R
DS(on)
-
On-Resistance
(Normalized)
1.6
1.5
1.4
6
5
4
3
2
1
0
0
5
10
15
20
25
30
V
DS
=
8.4 V
V
DS
= 6
V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 50
I
D
= 7.7 A
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
= 4.5, 2.5, 1.8
V
- 25
0
25
50
75
100
125
150
Q
g
-
Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73381
S-83054-Rev. D, 29-Dec-08
www.vishay.com
3
Si5475BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS
20
R
DS(on)
- Drain-to-Source
On-Resistance (Ω)
25 °C, unless otherwise noted
0.10
I
D
= 5.6 A
0.08
10
I
S
- Source Current (A)
0.06
T
A
= 25 °C
0.04
T
A
= 125 °C
T
J
= 150 °C
T
J
= 25 °C
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.0
50
On-Resistance vs. Gate-to-Source Temperature
0.9
I
D
= 250
µA
V
GS(th)
Variance
(V)
0.8
Po
w
er (
W
)
40
30
0.7
20
0.6
10
0.5
0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
(DS)on
*
10
I
D
-
Drain Current (A)
1 ms
10 ms
100 ms
1s
10 s
0.1
T
A
= 25 °C
Single Pulse
DC
Single Pulse Power, Junction-to-Ambient
1
0.01
0.1
1
10
100
V
DS
-
Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73381
S-83054-Rev. D, 29-Dec-08
Si5475BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS
16
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
Po
w
er Dissipation (
W
)
I
D
-
Drain Current (A)
25 °C, unless otherwise noted
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
Package Limited
T
C
-
Case Temperature (°C)
T
C
-
Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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