NTE52
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed
power switching in inductive circuits where fall time is critical. This device is particularly suited for
line–operated switch–mode appliations.
Applications:
D
Switching Regulators
D
Motor Controls
D
Inverters
D
Solenoid and Relay Drivers
Features:
D
Fast Turn–Off Times:
100ns Inductive Fall Time @ +25°C (Typ)
150ns Inductive Crossover Time @ +25°C (Typ)
400ns Inductive Storage Time @ +25°C (Typ)
D
Operating Temperature Range: –65° to +200°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Voltage, V
CEV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Emitter–Base Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, I
B
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total Device Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.714W/°C
Total Device Dissipation (T
C
= +100°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71.5W
Operating Junction Temperatur Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperatur Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W
Maximum Lead temperature (During Soldering, 1/8” from case, 5sec), T
L
. . . . . . . . . . . . . . . +275°C
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle
≤
10%.
Electrical Charactetristics:
(T
C
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
(Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
V
CEO(sus)
I
C
= 100mA, I
B
= 0
I
CEV
V
CEV
= 750V, V
BE(off)
= 1.5V
V
CEV
= 750V, V
BE(off)
= 1.5V,
T
C
= +100°C
I
CER
Emitter Cutoff Current
ON Characteristics
(Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
h
FE
V
CE(sat)
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A, T
C
= +100°C
I
C
= 5A, I
B
= 1A
Base–Emitter Saturation Voltage
Dynamic Characteristics
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
C
ob
t
d
t
r
t
s
t
f
t
sv
t
c
t
fi
t
sv
t
c
t
fi
I
C
= 3A peak, V
clamp
= 250V, I
B1
= 0.4A,
V
BE(off)
= 5V, T
J
= +100°C
°
I
C
= 3A peak, V
clamp
= 250V, I
B1
= 0.4A,
V
BE(off)
= 5V
V
CB
= 10V, I
E
= 0, f = 1kHz
V
CC
= 250V, I
C
= 3A, I
B1
= 0.4A,
µ
V
BE(off)
= 5V, t
p
= 300µs,
Duty Cycle
≤
2%
–
–
–
–
–
–
–
–
–
–
–
–
0.03
0.10
0.40
250
0.05
1.40
0.50
pF
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Switching Characteristics
(Resistive Load)
V
BE(sat)
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A, T
C
= +100°C
8
–
–
–
–
–
–
–
–
–
–
–
–
1.0
2.0
3.0
1.5
1.5
V
V
V
V
V
I
EBO
V
CEV
= 750V, R
BE
= 50Ω, T
C
= +100°C
V
EB
= 6V, I
C
= 0
450
–
–
–
–
–
–
–
–
–
–
0.5
2.5
3.0
1.0
V
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
0.175 0.500
0.40
0.15
0.10
0.70
0.28
0.15
–
–
–
2.0
0.50
0.30
Switching Characteristics
(Inductive Load, Clamped)
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle
≤
2%.
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