BAL99-G
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Fast switching speed
3
• Surface mount package
• Well suited for automated assembly process
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
1
2
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
PARTS TABLE
PART
BAL99-G
ORDERING CODE
BAL99-G3-08 or BAL99-G3-18
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
JG
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
t
p
= 1 μs
Peak forward surge current
Average forward current
Power dissipation
On fiberglass substrate
30 mm x 10 mm x 1.6 mm
t
p
= 1 ms
t
p
= 1 s
TEST CONDITION
SYMBOL
V
RRM
= V
RWM
= V
R
I
FSM
I
FSM
I
FSM
I
FAV
P
tot
VALUE
70
2
1
0.5
250
350
UNIT
V
A
A
A
mA
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
On fiberglass substrate
30 mm x 10 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
357
150
- 55 to + 150
- 55 to + 150
UNIT
K/W
°C
°C
°C
Rev. 1.0, 15-May-13
Document Number: 85417
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAL99-G
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
R
= 70 V
SYMBOL
V
F
V
F
V
F
V
F
I
R
I
R
I
R
C
D
t
rr
MIN.
TYP.
MAX.
0.715
0.855
1
1.25
2.5
100
30
1.5
6
UNIT
V
V
V
V
μA
μA
μA
pF
ns
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
V
R
= 70 V, T
j
= 150 °C
V
R
= 25 V, T
j
= 150 °C
V
F
= V
R
= 0, f = 1 MHz
I
F
= I
R
= 10 mA, i
R
= 1 mA
PACKAGE DIMENSIONS
in millimeters (inches):
SOT-23
1.15 (0.045)
2.6 (0.102)
2.35 (0.093)
0.7 (0.028)
0.95 (0.037)
0.1 (0.004) max.
0.175 (0.007)
0.098 (0.004)
0.2 (0.008)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.3 (0.012)
0.45 (0.018)
1.43 (0.056)
1.20 (0.047)
0.35 (0.014)
Foot print recommendation:
2 (0.079)
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
0.95 (0.037)
Rev. 1.0, 15-May-13
Document Number: 85417
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.9 (0.035)
0° t
0.5 (0.020)
o8
°
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
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Revision: 08-Feb-17
1
Document Number: 91000