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BAL99-G3-08

Description
Diodes - General Purpose, Power, Switching 70 Volt 250mA 6ns 2A IFSM
CategoryDiscrete semiconductor    diode   
File Size78KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BAL99-G3-08 Overview

Diodes - General Purpose, Power, Switching 70 Volt 250mA 6ns 2A IFSM

BAL99-G3-08 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionGREEN PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time12 weeks
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.35 W
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
BAL99-G
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Fast switching speed
3
• Surface mount package
• Well suited for automated assembly process
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
1
2
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
PARTS TABLE
PART
BAL99-G
ORDERING CODE
BAL99-G3-08 or BAL99-G3-18
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
JG
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
t
p
= 1 μs
Peak forward surge current
Average forward current
Power dissipation
On fiberglass substrate
30 mm x 10 mm x 1.6 mm
t
p
= 1 ms
t
p
= 1 s
TEST CONDITION
SYMBOL
V
RRM
= V
RWM
= V
R
I
FSM
I
FSM
I
FSM
I
FAV
P
tot
VALUE
70
2
1
0.5
250
350
UNIT
V
A
A
A
mA
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
On fiberglass substrate
30 mm x 10 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
357
150
- 55 to + 150
- 55 to + 150
UNIT
K/W
°C
°C
°C
Rev. 1.0, 15-May-13
Document Number: 85417
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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