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BCR142B6327HTLA1

Description
Bipolar Transistors - Pre-Biased
CategoryDiscrete semiconductor    The transistor   
File Size833KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BCR142B6327HTLA1 Overview

Bipolar Transistors - Pre-Biased

BCR142B6327HTLA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 2.14
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
BCR142...
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
=22kΩ,
R
2
=47kΩ)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR142
BCR142W
C
3
R
1
R
2
1
B
2
E
EHA07184
Type
BCR142
BCR142W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR142,
T
S
102°C
BCR142W,
T
S
124°C
Junction temperature
Storage temperature
Marking
WZs
WZs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
-
-
-
-
-
-
Package
SOT23
SOT323
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
60
10
100
200
250
Unit
V
mA
mW
T
j
T
stg
150
-65 ... 150
°C
1
2011-08-29

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