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2N3507U4

Description
Bipolar Transistors - BJT Power BJT
CategoryDiscrete semiconductor    The transistor   
File Size198KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N3507U4 Overview

Bipolar Transistors - BJT Power BJT

2N3507U4 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)30
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)5 W
surface mountYES
Base Number Matches1
2N3506U4 thru 2N3507AU4
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/349
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The
U4 package is hermetically sealed and provides a low profile for minimizing board height.
The 'A' version maintains it's forward current transfer ratio, h
FE
, at low temperature at higher
collector-emitter voltage. These devices also available in TO-5 and TO-39 packages.
Microsemi also offers numerous other transistor products to meet higher and lower power
ratings with various switching speed requirements in both through-hole and surface-mount
packages.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX and
JANTXV
U4 Package
Also available in:
TO-39 package
(leaded)
2N3506 – 2N3507A
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 2N3506U4 through 2N3507U4 series.
RoHS compliant versions available (commercial grade only).
Vce(sat) = 0.5 V @ Ic = 500 mA
Rise time t
r
= 30 ns max @ I
C
= 1.5 A, I
B1
= 150 mA
Fall time t
f
= 35 ns max @ I
C
= 1.5 A, I
B1
= I
B2
= 150 mA
TO-5 package
(leaded)
2N3506L – 2N3507AL
APPLICATIONS / BENEFITS
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
MAXIMUM RATINGS
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25 °C
(2)
@ T
C
= +100 °C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
stg
2N3506U4
40
60
2N3507U4
50
80
Unit
V
V
V
A
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
5.0
3.0
1.0
5.0
-65 to +200
Operating & Storage Junction Temperature Range
Notes:
1. Derate linearly 5.71 mW/°C for T
A
> +25 °C.
2. Vce = 40V.
LDS-0016-2, Rev. 1 (111616)
©2011 Microsemi Corporation
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