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FJN4307RTA

Description
Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size35KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FJN4307RTA Overview

Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial

FJN4307RTA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
package instructionTO-92, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 2.14
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)68
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
FJN4307R
FJN4307R
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=22KΩ, R
2
=47KΩ)
• Complement to FJN3307R
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-10
-100
300
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
E
R2
B
Equivalent Circuit
C
R1
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
C
ob
f
T
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Test Condition
I
C
= -10µA, I
E
=0
I
C
= -100µA, I
B
=0
V
CB
= -40V, I
E
=0
V
CE
= -5V, I
C
= -5mA
I
C
= -10mA, I
B
= -0.5mA
V
CB
= -10V, I
E
=0
f=1MHz
V
CE
= -10V, I
C
= -5mA
V
CE
= -5V, I
C
= -100µA
V
CE
= -0.3V, I
C
= -2mA
15
0.42
22
0.47
-0.4
-2.5
29
0.52
5.5
200
68
-0.3
V
pF
MHz
V
V
KΩ
Min.
-50
-50
-0.1
Typ.
Max.
Units
V
V
µA
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002

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