SMD Fast Recovery Rectifiers
CFRM101-G Thru. CFRM107-G
Voltage: 50 to 1000 Volts
Current: 1.0 A
RoHS Device
Features
-Plastic package has Underwirters Laboratory
flammability classification 94V-0 utilizing flame
retardant epoxy molding compound.
-For surface mounted applications.
-Exceeds environmental standard of MIL-STD-
19500/228.
-Low leakage current.
0.075(1.9)
0.059(1.5)
Mini SMA
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ.
Mechanical data
-Case: Molded plastic, JEDEC SOD-123/Mini SMA.
-Terminals: Solder plated, solderable per MIL-STD-
750, method 2026.
-Polarity: Indicated by cathode band.
-Weight: 0.018 grams approx.
Dimensions in inches and (millimeter)
0.067(1.7)
0.051(1.3)
0.028(0.7) Typ.
0.028(0.7) Typ.
Maximum Ratings
(at TA=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
RMS voltage
Continuous reverse voltage
Forward rectified current
Maximum forward voltage @I
F
= 1.0A
Forward surge current, 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
@T
A
= 25 °C
Reverse current, V
R
=V
RRM
@T
A
=100 °C
Reverse recovery time (note 1)
Thermal resistance, junction to ambient air
Diode junction capacitance
Operating junction temperature
f=1MHz and applied 4V DC reverse voltage
Symbol
V
RRM
V
RMS
V
R
I
O
V
F
CFRM
101-G
CFRM
102-G
CFRM
103-G
CFRM
104-G
CFRM
105-G
CFRM
106-G
CFRM
107-G
Unit
V
V
V
A
V
50
35
50
100
70
100
200
140
200
400
280
400
1.0
1.3
600
420
600
800
560
800
1000
700
1000
I
FSM
30
A
5.0
I
R
100
t
rr
R
θJA
C
J
T
J
T
STG
150
42
15
-55 to +150
-65 to +175
250
500
O
μA
nS
C/W
pF
O
C
C
Storage temperature range
O
Note 1. Reverse recovery time test condition , I
F
=1.0A, I
RR
=0.25A
REV:C
QW-BF006
Page 1
Comchip Technology CO., LTD.
SMD Fast Recovery Rectifiers
Rating and Characteristic Curves (CFRM101-G Thru. CFRM107-G)
Fig.1 Forward Characteristics
100
Fig.2 Forward Current Derating Curve
1.2
Ι
Ο
, Averaged Forward Current (A)
1.0
I
F
, Forward Current (A)
10
0.8
1
0.6
0.4
Single phase, half
wave, 60Hz, resistive
or inductive load
0.1
T
J
=25 C
Pulse width=300μs
1% duty cycle
O
0.2
0.01
0.6
0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
50
100
150
O
200
V
F
, Forward Voltage (V)
T
A
, Ambient Temperature (
C)
Fig.3 Max. Non-repetitive Forward
Surge Current
50
Fig.4 Typical Junction Capacitance
35
I
FSM
, Peak Forward Surge Current (A)
40
C
J
, Junction Capacitance (pF)
T
J
=25 C
8.3ms single half sine
wave, JEDEC method
O
30
25
20
15
10
5
0
0.01
30
20
10
0
1
10
100
0.1
1
10
100
Number of Cycles at 60Hz
V
R
, Reverse Voltage (V)
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
trr
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
+0.5A
|
|
|
|
|
|
|
|
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
-1.0A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
1cm
SET TIME BASE FOR
50 / 10ns / cm
REV:C
QW-BF006
Page 2
Comchip Technology CO., LTD.
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