M74HC367
HEX BUS BUFFER
WITH 3 STATE OUTPUT NON INVERTING
s
s
s
s
s
s
s
HIGH SPEED:
t
PD
= 9ns (TYP.) at V
CC
= 6V
LOW POWER DISSIPATION:
I
CC
= 4µA(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 6mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 367
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
DIP
SOP
TSSOP
TUBE
M74HC367B1R
M74HC367M1R
T&R
M74HC367RM13TR
M74HC367TTR
DESCRIPTION
The M74HC367 is an high speed CMOS HEX
BUS BUFFER 3-STATE OUTPUTS fabricated
with silicon gate C
2
MOS technology.
This device contains six buffers, four buffers are
controlled by an enable input (G1) and the other
two buffers are controlled by the other enable
input (G2); the outputs of each buffer group are
enabled when G1 and/or G2 inputs are held low,
and when held high, these outputs are disabled in
a high-impedance state.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
July 2001
1/10
M74HC367
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 15
2, 4, 6, 10,
12, 14
3, 5, 7, 9, 11,
13
8
16
SYMBOL
G1, G2
1A to 6A
1Y to 6Y
GND
V
CC
NAME AND FUNCTION
3 State Output Enable
Input
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
INPUTS
G
L
L
H
X: Don’t Care
Z: High Impedance
OUTPUTS
An
L
H
X
Yn
L
H
Z
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
35
±
70
500(*)
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
P
D
Power Dissipation
T
stg
T
L
Storage Temperature
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°
C; derate to 300mW by 10mW/
°
C from 65
°
C to 85
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
t
r
, t
f
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time
V
CC
= 2.0V
V
CC
= 4.5V
V
CC
= 6.0V
Parameter
Value
2 to 6
0 to V
CC
0 to V
CC
-55 to 125
0 to 1000
0 to 500
0 to 400
Unit
V
V
V
°C
ns
ns
ns
2/10
M74HC367
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6ns)
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
C
L
(pF)
T
A
= 25°C
Min.
Typ.
25
7
6
30
10
9
42
14
12
36
11
9
49
15
13
32
14
12
Max.
60
12
10
85
17
14
105
21
18
90
18
15
110
22
19
95
19
16
Value
-40 to 85°C
Min.
Max.
75
15
13
105
21
18
130
26
22
115
23
20
140
28
24
120
24
20
-55 to 125°C
Min.
Max.
90
18
15
130
26
22
160
32
27
135
27
23
165
33
28
145
29
25
ns
Unit
t
TLH
t
THL
Output Transition
Time
t
PLH
t
PHL
Propagation Delay
Time
50
50
ns
150
ns
t
PZL
t
PZH
High Impedance
Output Enable
Time
50
R
L
= 1 K
Ω
ns
150
R
L
= 1 K
Ω
ns
t
PLZ
t
PHZ
High Impedance
Output Disable
Time
50
R
L
= 1 K
Ω
ns
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
T
A
= 25°C
Min.
Typ.
5
33
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (note
1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/6 (per
Channel)
4/10
M74HC367
TEST CIRCUIT
TEST
t
PLH
, t
PHL
t
PZL
, t
PLZ
t
PZH
, t
PHZ
C
L
= 50pF/150pF or equivalent (includes jig and probe capacitance)
R
1
= 1KΩ or equivalent
R
T
= Z
OUT
of pulse generator (typically 50Ω)
SWITCH
Open
V
CC
GND
WAVEFORM 1: PROPAGATION DELAY TIMES
(f=1MHz; 50% duty cycle)
5/10
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