NTE2582
Silicon NPN Transistor
High Speed Switching Regulator
Features:
D
High Breakdown Voltage and High Reliability
D
Fast Switching Speed
D
Wide ASO
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Collector Dissipation (T
A
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Collector Dissipation (T
C
= +25°C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width
≤
300µs, Duty Cycle
≤
10%.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 400V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1.6A
V
CE
= 5V, I
C
= 8A
V
CE
= 5V, I
C
= 10mA
Current Gain–Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
f
T
C
ob
V
CE(sat)
V
BE(sat)
V
CE
= 10V, I
C
= 1.6A
V
CB
= 10V, f = 1MHz
I
C
= 8A, I
B
= 1.6A
I
C
= 8A, I
B
= 1.6A
Min
–
–
20
10
10
–
–
–
–
Typ
–
–
–
–
–
20
160
–
–
Max
10
10
50
–
–
–
–
0.8
1.5
MHz
pF
V
V
Unit
µA
µA
Electrical Characteristics (Cont’d):
(T
A
= +25°C unless otherwise specified)
Parameter
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Sustaining Voltage
Turn–On Time
Storage Time
Fall Time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Test Conditions
I
C
= 1mA, I
E
= 0
I
C
= 10mA, R
BE
=
∞
I
E
= 1mA, I
C
= 0
Min
500
400
7
400
–
–
–
Typ
–
–
–
–
–
–
–
Max
–
–
–
–
0.5
2.5
0.3
Unit
V
V
V
V
µs
µs
µs
V
CEX(sus)
I
C
= 6A, I
B1
= 0.6A, I
B2
= –2.4A,
L = 500µH, Clamped
t
on
t
stg
t
f
I
C
= 10A, I
B1
= 2A, I
B2
= –4A,
R
L
= 20Ω, V
CC
= 200V, Note 2
Ω
Note 2. Pulse Width = 20µs, Duty Cycle
≤
1%.
.402 (10.2) Max
.224 (5.7) Max
.122 (3.1)
Dia
.295
(7.5)
.669
(17.0)
Max
.165
(4.2)
.173 (4.4) Max
.114 (2.9) Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE:
Tab is isolated
Analog electronics
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