NTE308
Integrated Thyristor/Rectifier (ITR)
TV Horizontal Deflection & Commutating Switch
Absolute Maximum Ratings:
Repetitive Peak Forward Off–State and Reverse Voltage, V
DRM
, V
RRM
. . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current, I
TRMSM
, I
FRMSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Mean On–State Current (T
C
= +80°C), I
TAVM
, I
FAVM
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.4A
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.45A
Repetitive Peak On–State Current, I
TRM
, I
FRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Surge Current (t = 10ms, t
vi
= +100°C), I
TSM
, I
FSM
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Non–Repetitive Rate of Rise of On–State Current, di/dt
crit
. . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/µs
Repetitive Rate of Rise of On–State Current (I
TM
= 20A, t
vi
= +100°C, V
DM
= 640V), di/dt
crit
(Pulse Generator Data: v
L
= 8V, i
K
= 0.25A, di
G
/dt
≥
0.25A/µs)
f
o
= 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A/µs
f
o
= 16kHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs
Rate of Rise of Off–State Voltage (t
vi
= +100°C, V
D
= 536V), dv/dt
crit
. . . . . . . . . . . . . . . . . . 400V/µs
Rate of Rise of Voltage Subsequent to Prior On–State Current, dv/dt
crit
t
vi
= +100°C, V
D
= 536V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs
Peak Gate Power Losses (t
g
≤
10µs), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Total Mean Gate Power Loss for One Cycle, P
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +130°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3°C/W
Thermal Resistance, Junction–to–Ambient, R
thJA
Without Heatsink . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35°C/W
On Vertical Cooling Fin 60mm x 60mm x 1.5mm, Al or Cu, Roughened Surface . . 10°C/W
Electrical Characteristics:
Maximum On–State Voltage (t
vi
= +25°C, i
T
= i
F
= 10A), V
T
, V
F
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.16V
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2V
Threshold Voltage, V
(TO)
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4V
Forward Slope Resistance, r
T
, r
F
Thyristor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53Ω
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70Ω
Electrical Characteristics (Cont’d):
Maximum Gate Trigger Voltage (t
vi
= +25°C, V
D
= 6V, R
A
= 20Ω), V
GT
. . . . . . . . . . . . . . . . . . . 2.0V
Minimum Gate Trigger Voltage (t
vi
= +100°C, V
D
= 6V, R
A
= 20Ω), V
GT
. . . . . . . . . . . . . . . . . . . 0.1V
Maximum Gate Trigger Current (t
vi
= +25°C, V
D
= 6V, R
A
= 20Ω), I
GT
. . . . . . . . . . . . . . . . . . . 50mA
Maximum Holding Current (t
vi
= +25°C, V
D
= 6V, R
A
= 20Ω), I
H
. . . . . . . . . . . . . . . . . . . . . . . . 100mA
Maximum Latching Current (t
vi
= +25°C, V
D
= 6V, R
GK
≥
20Ω), I
L
. . . . . . . . . . . . . . . . . . . . . . 210mA
(Pulse Generator Data: i
G
= 0.25A, di
G
/dt = 0.25A/µs, t
g
= 4µs)
Typical Capacitance, Anode–Cathode at Zero Voltage (t
vi
= +25°C, f
o
= 16kHz), C
zero
. . . . . 250pF
Maximum Lag Charge (t
vi
= +100°C, i
FM
= 10A, –di
F
/dt = 10A/µs), Q
S
. . . . . . . . . . . . . . . . . 0.96µAs
Maximum Forward Off–State and Reverse Current (t
vi
= +100°C, v
D
= 800V), i
D
, i
R
. . . . . . . 1.5mA
Maximum Gate Controlled Delay Time (t
vi
= +25°C, V
D
= 536V, i
TM
= 5A), t
gd
. . . . . . . . . . . . 0.8µs
(Pulse Generator Data: i
G
= 0.25A, di
G
/dt = 0.5A/µs)
Maximum Pulse Turn–Off Time (t
vi
= +100°C), t
qp
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1µs
Typical Pulse Turn–Off Time (t
vi
= +80°C, f
o
= 16kHz), t
qp
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8µs
Maximum Reverse Recovery Time (t
vi
= +25°C, i
FM
= 10A, –di
F
/dt = 10A/µs), t
rr
. . . . . . . . . . 0.7µs
.485 (12.3)
Dia
.295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.360
(9.14)
Min
Gate
.960 (24.3)
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Anode/Case
Cathode
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