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BD901

Categorysemiconductor    Discrete semiconductor   
File Size61KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
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BD901 Parametric

Parameter NameAttribute value
Product CategoryDarlington Transistors
ManufacturerBourns
RoHSNo
ConfigurationSingle
Transistor PolarityNPN
Collector- Emitter Voltage VCEO Max100 V
Emitter- Base Voltage VEBO5 V
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current8 A
Maximum Collector Cut-off Current200 uA
Mounting StyleThrough Hole
Package / CaseTO-220-3
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min750
Height9.3 mm
Length10.4 mm
Minimum Operating Temperature- 65 C
Factory Pack Quantity50
Width4.7 mm
Unit Weight0.211644 oz
BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
Designed for Complementary Use with
BD896, BD898, BD900 and BD902
70 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 3A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD895
Collector-base voltage (I
E
= 0)
BD897
BD899
BD901
BD895
Collector-emitter voltage (I
B
= 0)
BD897
BD899
BD901
Base-emitter voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating free-air temperature range
Operating junction temperature range
Storage temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
A
T
j
T
stg
V
CEO
V
CBO
SYMBOL
VALUE
45
60
80
100
45
60
80
100
5
8
0.3
70
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

BD901 Related Products

BD901 BD895 BD897A-S
Description Darlington Transistors 70W NPN Silicon Darlington Transistors 60V 8A NPN
Configuration Single DARLINGTON DARLINGTON
Is it Rohs certified? - incompatible conform to
Maker - Bourns Bourns
Parts packaging code - SFM TO-220AB
package instruction - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts - 3 3
Reach Compliance Code - unknown compliant
ECCN code - EAR99 EAR99
Shell connection - COLLECTOR COLLECTOR
Maximum collector current (IC) - 8 A 8 A
Collector-emitter maximum voltage - 45 V 60 V
Minimum DC current gain (hFE) - 750 750
JEDEC-95 code - TO-220AB TO-220AB
JESD-30 code - R-PSFM-T3 R-PSFM-T3
Number of components - 1 1
Number of terminals - 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - NPN NPN
Certification status - Not Qualified Not Qualified
surface mount - NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
Transistor component materials - SILICON SILICON
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