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BD895

Description
Darlington Transistors 70W NPN Silicon
CategoryDiscrete semiconductor    The transistor   
File Size61KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
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BD895 Overview

Darlington Transistors 70W NPN Silicon

BD895 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBourns
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage45 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
Designed for Complementary Use with
BD896, BD898, BD900 and BD902
70 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 3A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD895
Collector-base voltage (I
E
= 0)
BD897
BD899
BD901
BD895
Collector-emitter voltage (I
B
= 0)
BD897
BD899
BD901
Base-emitter voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating free-air temperature range
Operating junction temperature range
Storage temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
A
T
j
T
stg
V
CEO
V
CBO
SYMBOL
VALUE
45
60
80
100
45
60
80
100
5
8
0.3
70
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

BD895 Related Products

BD895 BD901 BD897A-S
Description Darlington Transistors 70W NPN Silicon Darlington Transistors 60V 8A NPN
Configuration DARLINGTON Single DARLINGTON
Is it Rohs certified? incompatible - conform to
Maker Bourns - Bourns
Parts packaging code SFM - TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3
Contacts 3 - 3
Reach Compliance Code unknown - compliant
ECCN code EAR99 - EAR99
Shell connection COLLECTOR - COLLECTOR
Maximum collector current (IC) 8 A - 8 A
Collector-emitter maximum voltage 45 V - 60 V
Minimum DC current gain (hFE) 750 - 750
JEDEC-95 code TO-220AB - TO-220AB
JESD-30 code R-PSFM-T3 - R-PSFM-T3
Number of components 1 - 1
Number of terminals 3 - 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type NPN - NPN
Certification status Not Qualified - Not Qualified
surface mount NO - NO
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
Transistor component materials SILICON - SILICON
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