OBSOLETE
MPPS™ Miniature Package Power Solutions
DUAL 60V, 1.65A SCHOTTKY DIODE COMBINATION
SUMMARY
Schottky Diode - V
R
= 60V; V
F
= 600mV(@1A); IC=1.65A
DESCRIPTION
Packaged in the new innovative 3x2 MLP (Micro Leaded Package) outline, this
combination dual comprises two 60V 0.9A Schottky barrier diodes. This excellent
combination provides users with highly efficient performance in applications
including DC-DC converters and charging circuits.
Additionally users gain several other
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower Package Height (0.9mm nom)
Reduced component count
ZXSDS2M832
MLP832
FEATURES
•
Extremely Low V
F
, fast switching Schottky
•
I
F
= 1.65A Continuous Forward Current
•
3mm x 2mm MLP
APPLICATIONS
•
DC-DC Converters
•
DC-DC Modules
•
Mosfet gate drive circuits
•
Charging circuits
•
Mobile Phones
•
Motor Control
PINOUT
ORDERING INFORMATION
DEVICE
ZXSDS2M832TA
ZXSDS2M832TC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
Bottom View
DEVICE MARKING
•
DS2
ISSUE 2 June 2003
1
SEMICONDUCTORS
OBSOLETE
ZXSDS2M832
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse Voltage
Forward Voltage @ I
F
= 1000mA
Forward Current
Average Forward Current D=50%, t<=300us
Non Repetitive Forward Current t<=100us
Non Repetitive Forward Current t<=10ms
Power Dissipation at TA=25°C
(a)(f)
Linear Derating Factor
Power Dissipation at TA=25°C
Linear Derating Factor
Power Dissipation at TA=25°C
Linear Derating Factor
Power Dissipation at TA=25°C
(d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C
(d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C
(e)(g)
Linear Derating Factor
Storage Temp, Range
Operating & Storage Temp, Range
Tstg
Tj
P
D
P
D
P
D
(c)(f)
(b)(f)
SYMBOL
V
R
V
F
I
F
I
FAV
I
FSM
P
D
P
D
P
D
LIMIT
60
600
1.65
1.24
16.8
5.63
1.2
12
2
20
0.8
8
0.9
9
1.36
13.6
2.4
24
-55 to+150
-55 to+125
UNIT
V
mV
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)(f)
SYMBOL
R JA
R JA
R JA
R JA
R JA
R JA
VALUE
83.3
51
125
111
73.5
41.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
(b)(f)
Junction to Ambient
(c)(f)
Junction to Ambient
(d)(f)
Junction to Ambient
Junction to Ambient
(d)(g)
(e)(g)
NOTES
(a) For a dual device surface mounted on 8 sq. cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached.
The
copper area is split down the center line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed
pads attached.
The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions
with all exposed pads attached.
The
copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions
with all exposed pads attached.
The
copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in
the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz
weight, 1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=400mW.
ISSUE 2 June 2003
SEMICONDUCTORS
2
Power technology
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