2N7000G
Small Signal MOSFET
200 mAmps, 60 Volts
N−Channel TO−92
Features
http://onsemi.com
•
AEC Qualified
•
PPAP Capable
•
This is a Pb−Free Device*
200 mAMPS
60 VOLTS
R
DS(on)
= 5
W
N−Channel
D
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
Value
60
60
±
20
±
40
200
500
350
2.8
−55
to +150
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
TO−92
CASE 29
STYLE 22
12
1
2
G
MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain−Gate Voltage (R
GS
= 1.0 MW)
Gate−Source Voltage
−
Continuous
−
Non−repetitive (t
p
≤
50
ms)
Drain Current
−
Continuous
−
Pulsed
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Temperature
Range
S
I
DM
P
D
T
J
, T
stg
mW
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
Symbol
R
qJA
T
L
Max
357
300
Unit
°C/W
°C
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
AND PIN ASSIGNMENT
2N
7000
AYWW
G
G
1
Source
3
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
Gate
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
April, 2011
−
Rev. 8
1
Publication Order Number:
2N7000/D
2N7000G
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0, I
D
= 10
mAdc)
(V
DS
= 48 Vdc, V
GS
= 0)
(V
DS
= 48 Vdc, V
GS
= 0, T
J
= 125°C)
(V
GSF
= 15 Vdc, V
DS
= 0)
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
(V
GS
= 4.5 Vdc, I
D
= 75 mAdc)
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
(V
GS
= 4.5 Vdc, I
D
= 75 mAdc)
(V
GS
= 4.5 Vdc, V
DS
= 10 Vdc)
(V
DS
= 10 Vdc, I
D
= 200 mAdc)
V
(BR)DSS
I
DSS
60
−
−
−
−
1.0
1.0
−10
Vdc
mAdc
mAdc
nAdc
Symbol
Min
Max
Unit
Gate−Body Leakage Current, Forward
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
Static Drain−Source On−Resistance
I
GSSF
V
GS(th)
r
DS(on)
0.8
−
−
−
−
75
100
3.0
5.0
6.0
2.5
0.45
−
−
Vdc
W
Drain−Source On−Voltage
V
DS(on)
Vdc
On−State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
Turn−On Delay Time
Turn−Off Delay Time
I
d(on)
g
fs
C
iss
mAdc
mmhos
pF
−
−
−
60
25
5.0
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
C
oss
C
rss
t
on
t
off
(V
DD
= 15 V, I
D
= 500 mA,
R
G
= 25
W,
R
L
= 30
W,
V
gen
= 10 V)
−
−
10
10
ns
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
ORDERING INFORMATION
Device
2N7000G
2N7000RLRAG
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
†
1000 Units / Bulk
2000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
2N7000G
2.0
1.8
I D, DRAIN CURRENT (AMPS)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1.0
2.0 3.0 4.0 5.0
6.0
7.0 8.0
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
7V
6V
5V
4V
3V
9.0
10
0
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
T
A
= 25°C
I D, DRAIN CURRENT (AMPS)
V
GS
= 10 V
9V
8V
0.8
1.0
V
DS
= 10 V
- 55°C
125°C
25°C
0.6
0.4
0.2
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- 60
- 20
+ 20
+ 60
T, TEMPERATURE (°C)
+ 100
+ 140
V
GS
= 10 V
I
D
= 200 mA
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
- 60
- 20
+ 20
+ 60
T, TEMPERATURE (°C)
+ 100
+ 140
V
DS
= V
GS
I
D
= 1.0 mA
Figure 3. Temperature versus Static
Drain−Source On−Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
http://onsemi.com
3
2N7000G
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
B
STRAIGHT LEAD
BULK PACK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
---
0.250
---
0.080
0.105
---
0.100
0.115
---
0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
---
6.35
---
2.04
2.66
---
2.54
2.93
---
3.43
---
K
X X
H
V
1
D
G
J
C
N
N
SECTION X−X
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
---
2.04
2.66
1.50
4.00
2.93
---
3.43
---
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
K
G
X X
V
1
D
J
C
N
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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4
2N7000/D
Analogue and Mixed Signal
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