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2SD1223TE16L1NQ Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerToshiba Semiconductor
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSC-63-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max80 V
Collector- Base Voltage VCBO100 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1.5 V
Maximum DC Collector Current4 A
Maximum Operating Temperature+ 150 C
Continuous Collector Current4 A
DC Collector/Base Gain hfe Min2000
Minimum Operating Temperature- 55 C
PackagingReel
Pd - Power Dissipation15 W
Factory Pack Quantity100
2SD1223
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Darlington)
2SD1223
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
High DC current gain: h
FE
= 2000 (min) (V
CE
= 2 V, I
C
= 1 A)
Low saturation voltage: V
CE (sat)
= 1.5 V (max) (I
C
= 3 A)
Complementary to 2SB908.
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
100
80
5
4
0.4
1.0
15
150
−55
to 150
Unit
V
V
V
A
A
JEDEC
W
°C
°C
2-7J1A
JEITA
TOSHIBA
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
4.5 kΩ
300
EMITTER
Start of commercial production
1981-09
1
2013-11-01
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