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2SC4409TE12LF

Description
Bipolar Transistors - BJT NPN 50V 2A Transistor
Categorysemiconductor    Discrete semiconductor   
File Size188KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC4409TE12LF Overview

Bipolar Transistors - BJT NPN 50V 2A Transistor

2SC4409TE12LF Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerToshiba Semiconductor
RoHSDetails
Mounting StyleSMD/SMT
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO80 V
Emitter- Base Voltage VEBO6 V
Maximum DC Collector Current2 A
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min120
DC Current Gain hFE Max120 at 100 mA at 2 V
Height1.6 mm
Length4.6 mm
Minimum Operating Temperature- 55 C
PackagingReel
Pd - Power Dissipation1000 mW
Factory Pack Quantity1000
Width2.5 mm
2SC4409
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409
Power Amplifier Applications
Power switching applications
Low collector saturation voltage: V
CE (sat)
= 0.5V (max) (at I
C
= 1A)
High speed switching time: t
stg
= 500ns (typ.)
Small flat package
P
C
= 1~2 W (Mounted on a ceramic substrate)
Complementary to 2SA1681
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
(Note 1)
T
j
T
stg
Rating
80
50
6
2
0.2
500
1000
150
−55~150
2
Unit
V
V
V
A
A
mW
mW
°C
°C
JEDEC
JEITA
TOSHIBA
SC-62
2-5K1A
Weight: 0.05 g (typ.)
Note 1: 2SC4409 mounted on a ceramic substrate (250 mm
×
0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21

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