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MPS6652G

Description
Bipolar Transistors - BJT 1A 30V PNP
CategoryDiscrete semiconductor    The transistor   
File Size83KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MPS6652G Overview

Bipolar Transistors - BJT 1A 30V PNP

MPS6652G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-92
package instructionLEAD FREE, CASE 29-11, TO-226, 3 PIN
Contacts3
Manufacturer packaging code29-11
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)75 ns
Maximum opening time (tons)280 ns
NPN − MPS6601; PNP −
MPS6651, MPS6652
MPS6652 is a Preferred Device
Amplifier Transistors
Features
Voltage and Current are Negative for PNP Transistors
Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
3
COLLECTOR
3
2
BASE
NPN
1
EMITTER
Vdc
PNP
1
EMITTER
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
MPS6601/6651
MPS6652
Collector −Base Voltage
MPS6601/6651
MPS6652
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
V
CBO
25
30
4.0
1000
625
5.0
1.5
12
−55 to +150
Vdc
mAdc
W
mW/°C
W
mW/°C
°C
Symbol
V
CEO
25
40
Value
Unit
Vdc
2
BASE
TO−92
CASE 29
STYLE 1
12
1
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
(Note 1)
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
MPS
66xy
AYWW
G
G
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. R
qJA
is measured with the device soldered into a typical printed circuit board.
MPS66xy = Device Code
x = 0 or 5
y = 1 or 2
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
Preferred
devices are recommended choices for future use
and best overall value.
1
April, 2007 − Rev. 5
Publication Order Number:
MPS6601/D
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