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VS-1N1188R

CategoryDiscrete semiconductor    diode   
File Size160KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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VS-1N1188R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instructionDO-5, 1 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time18 weeks
Other featuresLOW LEAKAGE CURRENT
applicationPOWER
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeDO-203AB
JESD-30 codeO-MUPM-D1
JESD-609 codee3
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature190 °C
Minimum operating temperature-65 °C
Maximum output current35 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage400 V
Maximum reverse current10000 µA
surface mountNO
Terminal surfaceTin (Sn) - with Nickel (Ni) barrier
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
Vishay Semiconductors
Power Silicon Rectifier Diodes,
(Stud Version), 35 A, 40 A, 60 A
FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DO-203AB (DO-5)
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
35 A, 40 A, 60 A
DO-203AB (DO-5)
Single diode
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
FSM
I
2
t
I
2
t
V
RRM
T
J
Note
(1)
JEDEC
®
registered values
TEST CONDITIONS
T
C
50 Hz
60 Hz
50 Hz
60 Hz
Range
1N1183
35
(1)
140
(1)
480
500
(1)
1140
1040
16 100
50 to 600
(1)
-65 to +200
1N3765
35
(1)
140
(1)
380
400
(1)
730
670
10 300
700 to 1000
(1)
-65 to +200
1N1183A
40
(1)
150
(1)
765
800
(1)
2900
2650
41 000
50 to 600
(1)
-65 to +200
1N2128A
60
(1)
140
(1)
860
900
(1)
3700
3400
52 500
50 to 600
(1)
-65 to +200
UNITS
A
°C
A
A
2
s
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-1N1183
VS-1N1184
VS-1N1185
VS-1N1186
VS-1N1187
VS-1N1188
VS-1N1189
VS-1N1190
VS-1N3765
VS-1N3766
VS-1N3767
VS-1N3768
VS-1N1183A
VS-1N1184A
VS-1N1185A
VS-1N1186A
VS-1N1187A
VS-1N1188A
VS-1N1189A
VS-1N1190A
VS-1N2128A
VS-1N2129A
VS-1N2130A
VS-1N2131A
VS-1N2133A
VS-1N2135A
VS-1N2137A
VS-1N2138A
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
(T
J
= -65 °C to +200 °C
(2)
)
V
50
(1)
100
(1)
150
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
(1)
700
(1)
800
(1)
900
(1)
1000
(1)
V
RM
, MAXIMUM DIRECT
REVERSE VOLTAGE
(T
J
= -65 °C to +200 °C
(2)
)
V
50
(1)
100
(1)
150
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
(1)
700
(1)
800
(1)
900
(1)
1000
(1)
Notes
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA
(1)
JEDEC
®
registered values
(2)
For 1N1183 Series and 1N3765 Series T = -65 °C to +190 °C
C
Revision: 12-Nov-15
Document Number: 93492
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VS-1N1188R Related Products

VS-1N1188R BLU0603ER-2083-CB50 VS-1N1188RA VS-1N2130RA VS-1N1186RA
Description Fixed Resistor, Thin Film, 0.1W, 208000ohm, 75V, 0.25% +/-Tol, 50ppm/Cel, 0603, MOSFET SOT-23 N-CH LOGIC Rectifiers 150 Volt 60 Amp Rectifiers 200 Volt 35 Amp
Reach Compliance Code unknown compliant unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Number of terminals 1 2 1 1 1
Maximum operating temperature 190 °C 155 °C 200 °C 200 °C 200 °C
Minimum operating temperature -65 °C -55 °C -65 °C -65 °C -65 °C
Package form POST/STUD MOUNT SMT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Is it Rohs certified? conform to - conform to conform to conform to
Maker Vishay - Vishay - Vishay
package instruction DO-5, 1 PIN - DO-5, 1 PIN DO-5, 1 PIN DO-5, 1 PIN
Factory Lead Time 18 weeks - 18 weeks 18 weeks -
Other features LOW LEAKAGE CURRENT - LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
application POWER - POWER POWER POWER
Shell connection ANODE - ANODE ANODE ANODE
Configuration SINGLE - SINGLE SINGLE SINGLE
Diode component materials SILICON - SILICON SILICON SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.7 V - 1.3 V 1.3 V 1.3 V
JEDEC-95 code DO-203AB - DO-203AB DO-203AB DO-203AB
JESD-30 code O-MUPM-D1 - O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
JESD-609 code e3 - e3 e3 e3
Maximum non-repetitive peak forward current 500 A - 800 A 900 A 800 A
Number of components 1 - 1 1 1
Phase 1 - 1 1 1
Maximum output current 35 A - 40 A 60 A 40 A
Package body material METAL - METAL METAL METAL
Package shape ROUND - ROUND ROUND ROUND
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 400 V - 400 V 150 V 200 V
Maximum reverse current 10000 µA - 2500 µA 10000 µA 2500 µA
surface mount NO - NO NO NO
Terminal surface Tin (Sn) - with Nickel (Ni) barrier - Tin (Sn) - with Nickel (Ni) barrier Tin (Sn) - with Nickel (Ni) barrier Tin (Sn) - with Nickel (Ni) barrier
Terminal form SOLDER LUG - SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER - UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches - - 1 1 1

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