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RUM003N02T2L

Description
Interface - I/O Expanders 16bit Input/Output Exp SPI interface
CategoryDiscrete semiconductor    The transistor   
File Size97KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RUM003N02T2L Overview

Interface - I/O Expanders 16bit Input/Output Exp SPI interface

RUM003N02T2L Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)0.3 A
Maximum drain current (ID)0.3 A
Maximum drain-source on-resistance1.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
RUM003N02
Transistor
1.8V Drive Nch MOSFET
RUM003N02
Structure
Silicon N-channel
MOSFET
Dimensions
(Unit : mm)
VMT3
Applications
Switching
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (1.8V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1)Base(IN)(Gate)
(2)Emitter(GND)(Source)
(3)Collector(OUT)(Drain)
Abbreviated symbol : QT
Packaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
RUM003N02
Taping
T2L
8000
Equivalent circuit
Drain
Gate
∗2
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
1
P
D
2
Tch
Tstg
Limits
20
±8
±300
±600
150
150
−55
to
+150
Unit
V
V
mA
mA
mW
°C
°C
∗1
Source
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Each terminal mounted on a recommended land
Thermal resistance
Parameter
Channel to ambient
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
Limits
833
Unit
°C
/ W
Rev.B
1/3

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Index Files: 1299  322  1926  770  1065  27  7  39  16  22 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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