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TPN1600ANHL1Q

Description
Accelerometers LOW G 3-AXIS 14BT EX VLT
Categorysemiconductor    Discrete semiconductor   
File Size230KB,10 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TPN1600ANHL1Q Overview

Accelerometers LOW G 3-AXIS 14BT EX VLT

TPN1600ANHL1Q Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerToshiba Semiconductor
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSON-Advance-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current36 A
Rds On - Drain-Source Resistance13 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge19 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
Channel ModeEnhancement
ConfigurationSingle Quad Drain
Fall Time6.2 ns
Height0.85 mm
Length3.1 mm
Pd - Power Dissipation42 W
Rise Time5 ns
Factory Pack Quantity5000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Typical Turn-On Delay Time14 ns
Width3.1 mm
TPN1600ANH
MOSFETs
Silicon N-channel MOS (U-MOS-H)
TPN1600ANH
1. Applications
DC-DC Converters
Switching Voltage Regulators
Motor Drivers
2. Features
(1)
(2)
(3)
(4)
(5)
(6)
Small, thin package
High-speed switching
Small gate charge: Q
SW
= 7.4 nC (typ.)
Low drain-source on-resistance: R
DS(ON)
= 13 mΩ (typ.) (V
GS
= 10 V)
Low leakage current: I
DSS
= 10
µA
(max) (V
DS
= 100 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 0.2 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(Silicon limit)
(T
c
= 25
)
(t = 1 ms)
(T
c
= 25
)
(t = 10 s)
(t = 10 s)
(Note 3)
(Note 4)
(Note 5)
(Note 1), (Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
D
I
DP
P
D
P
D
P
D
E
AS
I
AR
T
ch
T
stg
Rating
100
±20
36
17
80
42
1.9
0.7
96
17
150
-55 to 150
A
W
W
W
mJ
A
Unit
V
V
A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2012-08-28
Rev.1.0
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