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2SD1862TV2Q

Description
Bipolar Transistors - BJT DRIVER NPN 32V 2A
CategoryDiscrete semiconductor    The transistor   
File Size103KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SD1862TV2Q Overview

Bipolar Transistors - BJT DRIVER NPN 32V 2A

2SD1862TV2Q Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSIP-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
Medium power transistor (32V, 2A)
2SD1758 / 2SD1862
Features
1) Low V
CE(sat)
.
V
CE(sat)
= 0.5V (Typ.)
(I
C
/I
B
= 2A / 0.2A)
2) Complements the 2SB1182 / 2SB1240
Structure
Epitaxial planar type NPN silicon transistor
Dimensions
(Units : mm)
2SD1758
1.5±0.3
2SD1862
6.5±0.2
5.1
+0.2
−0.1
C0.5
2.3
+0.2
−0.1
0.5±0.1
4.4
±
0.2
14.5
±
0.5
6.8
±
0.2
2.5
±
0.2
5.5
+0.3
−0.1
0.65Max.
0.9
2.3±0.2
2.3±0.2
0.55±0.1
1.0±0.2
(1)
(2)
(3)
1.05
0.45
±
0.1
0.5
±
0.1
(1) (2) (3)
2.54 2.54
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
1.0
0.75
0.65±0.1
2.5
9.5±0.5
0.9
1.5
0.9
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
2SD1758
2SD1862
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
40
32
5
2
2.5
10
1
150
−55
to
+150
Unit
V
V
V
A (DC)
A (Pulse)
∗1
W (T
C
=25°C)
∗2
W
°C
°C
P
C
Tj
Tstg
Junction temperature
Storage temperature
∗1
Single pulse, P
W
=20ms
∗2
Printed circuit board: 1.7 mm thick, collector copper plating 1 cm
2
or lager.
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
40
32
5
120
Typ.
0.5
100
30
Max.
1
1
390
0.8
Unit
V
V
V
μA
μA
V
MHz
pF
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=20V
V
EB
=4V
Conditions
V
CE
=3V,
I
C
=0.5A
I
C
/I
B
=2A/0.2A
V
CE
=5V,
I
E
=−50mA,
f=100MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
www.rohm.com
c
2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.04 - Rev.C
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