2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon
High−Power Transistors
Complementary silicon high−power transistors are designed for
general−purpose power amplifier and switching applications.
Features
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•
Low Collector−Emitter Saturation Voltage −
•
•
•
•
V
CE(sat)
= 1.0 Vdc, (max) at I
C
= 15 Adc
Low Leakage Current
I
CEX
= 1.0 mAdc (max) at Rated Voltage
Excellent DC Current Gain −
h
FE
= 20 (min) at I
C
= 10 Adc
High Current Gain Bandwidth Product −
f
t
= 4.0 MHz (min) at I
C
= 1.0 Adc
Pb−Free Packages are Available*
25 AMPERE COMPLEMENTARY
SILICON POWER TRANSISTORS
60 − 80 VOLTS, 200 WATTS
MAXIMUM RATINGS
(Note 1)
Rating
TO−204AA (TO−3)
CASE 1−07
STYLE 1
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Symbol
V
CEO
Value
60
80
60
80
Unit
Vdc
Collector−Emitter Voltage
2N5883, 2N5885
2N5884, 2N5886
Collector−Base Voltage
2N5883, 2N5885
2N5884, 2N5886
V
CB
Vdc
Emitter−Base Voltage
Collector Current −
Continuous
Peak
Base Current
V
EB
I
C
5.0
25
50
Vdc
Adc
I
B
7.5
Adc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
P
D
200
1.15
W
W/°C
°C
T
J
, T
stg
– 65 to + 200
MARKING DIAGRAM
2N588xG
AYYWW
MEX
2N588x
G
A
YY
WW
MEX
THERMAL CHARACTERISTICS
Characteristic
Symbol
q
JC
Max
Unit
= Device Code
x = 3, 4, 5, or 6
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
Thermal Resistance, Junction−to−Case
0.875
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data. Units and conditions differ on some
parameters and re−registration reflecting these changes has been requested.
All above values most or exceed present JEDEC registered data.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 11
Publication Order Number:
2N5883/D
PD, POWER DISSIPATION (WATTS)
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2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
4. f
T
= |h
fe
|
•
f
test
.
SWITCHING CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(Note 2) (T
C
= 25°C unless otherwise noted)
Fall Time
Storage Time
Rise Time
Small−Signal Current Gain (I
C
= 3.0 Adc, V
CE
= 4.0 Vdc, f
test
= 1.0 kHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Current−Gain − Bandwidth Product (Note 4)
Base−Emitter On Voltage (Note 3)
Base−Emitter Saturation Voltage (Note 3)
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 15 Adc, I
B
= 1.5 Adc)
(I
C
= 25 Adc, I
B
= 6.25 Adc)
DC Current Gain (Note 3)
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
(I
C
= 25 Adc, V
CE
= 4.0 Vdc)
Emitter Cutoff Current (V
EB
= 5.0 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
Collector Cutoff Current
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C)
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C)
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 40 Vdc, I
B
= 0)
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 200 mAdc, I
B
= 0)
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
100
125
150
175
200
Characteristic
25
50
75
0
0
(V
CC
= 30 Vdc, I
C
= 10 Adc, I
B1
= I
B2
= 1.0 Adc)
(I
C
= 25 Adc, I
B
= 6.25 Adc)
(I
C
= 1.0 Adc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2N5883, 2N5885
2N5884, 2N5886
2N5883, 2N5885
2N5884, 2N5886
2N5883, 2N5884
2N5885, 2N5886
2N5883, 2N5885
2N5884, 2N5886
2N5883, 2N5885
2N5984, 2N5886
2N5883, 2N5885
2N5884, 2N5886
175
V
CEO(sus)
Symbol
V
CE(sat)
V
BE(sat)
V
BE(on)
I
CBO
I
CEO
I
EBO
I
CEX
C
ob
h
FE
200
h
fe
f
T
t
s
t
r
t
f
Min
4.0
35
20
4.0
20
60
80
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1000
500
Max
−
100
0.8
1.0
0.7
1.5
2.5
1.0
4.0
1.0
1.0
1.0
1.0
1.0
10
10
2.0
2.0
−
−
−
−
mAdc
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
ms
ms
ms
−
−
2
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
V
CC
−30 V
3.0
TO SCOPE
t
r
≤
20 ns
TURN−ON TIME
R
L
+2.0 V
0
t
r
≤
20 ns
−11 V
10 to 100
ms
t, TIME (
μ
s)
DUTY CYCLE
≈
2.0%
V
CC
R
L
+9.0 V
0
R
B
−11 V
t
r
≤
20 ns
10 to 100
ms
10
−30 V
3.0
TO SCOPE
t
r
≤
20 ns
10
R
B
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.3
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
t
r
T
J
= 25°C
I
C
/I
B
= 10
V
CC
= 30 V
V
BE(off)
= 2 V
TURN−OFF TIME
t
d
V
BB
+7.0 V
DUTY CYCLE
≈
2.0%
FOR CURVES OF FIGURES 3 & 6, R
B
& R
L
ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (AMPERES)
20
30
Figure 3. Turn−On Time
Figure 2. Switching Time Equivalent Test Circuits
1.0
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.5
D = 0.5
0.2
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
P
(pk)
q
JC
(t) = r(t)
q
JC
q
JC
= 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
READ TIME AT t
1
t
2
T
J(pk)
− T
C
= P
(pk)
q
JC
(t)
DUTY CYCLE, D = t
1
/t
2
0.05
0.02
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
20
50
100
200
500
1000
2000
Figure 4. Thermal Response
100
50
20
10
dc
1 ms
5 ms
500
ms
5.0
2.0
1.0
0.5
0.2
0.1
1.0
T
J
= 200°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
C
= 25°C
(SINGLE PULSE)
CURVES APPLY BELOW RATED V
CEO
2N5883, 2N5885
2N5884, 2N5886
2.0 3.0
5.0 7.0 10
20 30
50 70
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v
200°C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
IC, COLLECTOR CURRENT (AMPERES)
Figure 5. Active−Region Safe Operating Area
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3
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
10
7.0
5.0
3.0
t, TIME (
μ
s)
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.3
0.5 0.7
t
f
t
s
3000
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
t
s
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
2000
C, CAPACITANCE (pF)
C
ob
C
ib
1000
700
500
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
20
30
300
0.1
0.2
C
ob
50
100
C
ib
t
f
1.0
2.0 3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (AMPERES)
0.5
1.0 2.0
5.0
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn−Off Time
PNP DEVICES
2N5883 and 2N5884
1000
700
500
hFE , DC CURRENT GAIN
300
200
100
70
50
30
20
10
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20 30
25°C
−55
°C
1000
700
500
hFE , DC CURRENT GAIN
300
200
100
70
50
30
20
10
0.3
0.5 0.7
25°C
Figure 7. Capacitance
NPN DEVICES
2N5885 and 2N5886
T
J
= 150°C
V
CE
= 4.0 V
V
CE
= 4.0 V
T
J
= 150°C
−55
°C
1.0
2.0
3.0
5.0 7.0
10
20
30
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 8. DC Current Gain
Figure 9. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
2.0
T
J
= 25°C
1.6
I
C
= 2.0 A
1.2
5.0 A
10 A
20 A
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
2.0
T
J
= 25°C
1.6
I
C
= 2.0 A
5.0 A
10 A
20 A
1.2
0.8
0.8
0.4
0
0.01
0.4
0.02
0.05 0.1
0.2
0.5
1.0
I
B
, BASE CURRENT (AMPERES)
2.0
5.0
10
0
0.01
0.02
0.05 0.1 0.2
0.5
1.0 2.0
I
B
, COLLECTOR CURRENT (AMPERES)
5.0
10
Figure 10. Collector Saturation Region
Figure 11. Collector Saturation Region
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4
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
2.0
T
J
= 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
2.0
T
J
= 25°C
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 4 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20
30
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 4 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20
30
0.8
0.8
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 12. “On” Voltages
Figure 13. “On” Voltages
ORDERING INFORMATION
Device
2N5883
2N5883G
2N5884
2N5884G
2N5885
2N5885G
2N5886
2N5886G
Package
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
100 Units / Tray
TO−204
TO−204
(Pb−Free)
TO−204
TO−204
(Pb−Free)
Shipping
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
