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2SA2154-GR

Description
Bipolar Transistors - BJT
CategoryDiscrete semiconductor    The transistor   
File Size180KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA2154-GR Overview

Bipolar Transistors - BJT

2SA2154-GR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
2SA2154CT
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA2154CT
General Purpose Amplifier Applications
High voltage and high current : V
CEO
=
−50V,
I
C
=
−100mA
(max)
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1
mA) / h
FE
(I
C
=
−2
mA)= 0.95 (typ.)
High h
FE
:
h
FE
= 120 to 400
Unit: mm
Complementary to 2SC6026CT
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−50
−50
−5
−100
−30
100*
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
CST3
1.BASE
2.EMITTER
3.COLLECTOR
* : Mounted on FR4 board (10 mm
×
10 mm
×
1 mmt)
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-1J1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.75 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
120
80
Typ.
−0.18
1.6
Max
−0.1
−0.1
400
−0.3
Unit
μA
μA
V
MHz
pF
Note:
h
FE
classification Y (F): 120 to 240, GR (H): 200 to 400
( ) marking symbol
Marking
Type Name
h
FE
Rank
1
8F
2
3
Start of commercial production
2004-08
1
2014-03-01

2SA2154-GR Related Products

2SA2154-GR 2SA2154-Y
Description Bipolar Transistors - BJT Bipolar Transistors - BJT
Is it lead-free? Lead free Lead free
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 200 120
JESD-30 code R-PDSO-F3 R-PDSO-F3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz
Base Number Matches 1 1
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