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NLAS5223MNR2G

CategoryAnalog mixed-signal IC    The signal circuit   
File Size105KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NLAS5223MNR2G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeQFN
package instructionVQCCN, LCC10,.06X.07,16
Contacts10
Manufacturer packaging code488AQ
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time5 weeks
Analog Integrated Circuits - Other TypesSPDT
JESD-30 codeR-XQCC-N10
JESD-609 codee4
length1.8 mm
Humidity sensitivity level1
Number of channels1
Number of functions2
Number of terminals10
Nominal off-state isolation65 dB
On-state resistance matching specifications0.05 Ω
Maximum on-state resistance (Ron)0.3 Ω
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
outputSEPARATE OUTPUT
Package body materialUNSPECIFIED
encapsulated codeVQCCN
Encapsulate equivalent codeLCC10,.06X.07,16
Package shapeRECTANGULAR
Package formCHIP CARRIER, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)260
power supply1.8/3.3 V
Certification statusNot Qualified
Maximum seat height0.8 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)3 V
surface mountYES
Maximum disconnect time30 ns
Maximum connection time50 ns
switchBREAK-BEFORE-MAKE
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formNO LEAD
Terminal pitch0.4 mm
Terminal locationQUAD
Maximum time at peak reflow temperature40
width1.4 mm
NLAS5223, NLAS5223L
Ultra-Low 0.5
W
Dual SPDT Analog Switch
The NLAS5223 is an advanced CMOS analog switch fabricated in
Sub−micron silicon gate CMOS technology. The device is a dual
Independent Single Pole Double Throw (SPDT) switch featuring
Ultra−Low R
ON
of 0.5
W,
at V
CC
= 3.0
$
0.3 V.
The part also features guaranteed Break Before Make (BBM)
switching, assuring the switches never short the driver.
Features
www.onsemi.com
MARKING
DIAGRAM
WQFN−10
CASE 488AQ
1
= Specific Device Code
AU = NLAS5223
AV = NLAS5223L
M
= Date Code
G
= Pb−Free Device
(Note: Microdot may be in either location)
XX
XXMG
G
Ultra−Low R
ON
,
t0.5
W
at V
CC
= 3.0
$
0.3 V
NLAS5223 Interfaces with 2.8 V Chipset
NLAS5223L Interfaces with 1.8 V Chipset
Single Supply Operation from 1.65−3.6 V
Smallest 1.4 x 1.8 x 0.75 mm Thin QFN Package
Full 0−V
CC
Signal Handling Capability
High Off−Channel Isolation
Low Standby Current,
t50
nA
Low Distortion
R
ON
Flatness of 0.15
W
High Continuous Current Capability
$300
mA Through Each Switch
Large Current Clamping Diodes at Analog Inputs
$100
mA Continuous Current Capability
ESD Human Body Model > 2000 V
These are Pb−Free Devices
Applications
NC2
7
GND
6
IN2
8
5
NC1
COM2
9
4
IN1
NO2
10
3
COM1
Cell Phone Audio Block
Speaker and Earphone Switching
Ring−Tone Chip / Amplifier Switching
Modems
IN 1, 2
0
1
1
V
CC
2
NO1
FUNCTION TABLE
NO 1, 2
OFF
ON
NC 1, 2
ON
OFF
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
September, 2015 − Rev. 6
Publication Order Number:
NLAS5223/D
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