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RN2407

Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
CategoryDiscrete semiconductor    The transistor   
File Size167KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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RN2407 Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2407 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN RESISTOR RATIO IS 4.7
Maximum collector current (IC)0.1 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.3 V
RN2407~RN2409
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2407,RN2408,RN2409
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN1407~1409
Unit: mm
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2407~RN2409
RN2407
Emitter-base voltage
RN2408
RN2409
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2407~RN2409
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
200
150
−5~150
mA
mW
°C
°C
V
Unit
V
V
1
2001-06-07

RN2407 Related Products

RN2407 RN2408 RN2409
Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? conform to conform to conform to
Parts packaging code SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Other features BUILT-IN RESISTOR RATIO IS 4.7 BUILT-IN RESISTOR RATIO IS 2.14 BUILT-IN RESISTOR RATIO IS 0.47
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 6 pF 6 pF 6 pF
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 80 70
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz
VCEsat-Max 0.3 V 0.3 V 0.3 V
Maker Toshiba Semiconductor Toshiba Semiconductor -
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