RN2408 datasheet, PDF - EEWORLD Datasheet

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RN2408: DescriptionTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process); CategoryDiscrete semiconductor The transistor; File Size167KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN2408 Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2408 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Toshiba Semiconductor
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN RESISTOR RATIO IS 2.14
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	0.3 V

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RN2407~RN2409

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2407,RN2408,RN2409

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1407~1409

Unit: mm

Equivalent Circuit

JEDEC

EIAJ

TOSHIBA

Weight: 0.012g

TO-236MOD

SC-59

2-3F1A

Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2407~RN2409

RN2407

Emitter-base voltage

RN2408

RN2409

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2407~RN2409

stg

EBO

Symbol

CBO

CEO

Rating

−50

−6

−7

−15

−100

200

150

−5~150

°C

Unit

2001-06-07

RN2408 Related Products

	RN2408	RN2407	RN2409
Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to	conform to
Parts packaging code	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Other features	BUILT-IN RESISTOR RATIO IS 2.14	BUILT-IN RESISTOR RATIO IS 4.7	BUILT-IN RESISTOR RATIO IS 0.47
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-based maximum capacity	6 pF	6 pF	6 pF
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	80	70
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V
Maker	Toshiba Semiconductor	Toshiba Semiconductor	-

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