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FQD3P50TF

CategoryDiscrete semiconductor    The transistor   
File Size397KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FQD3P50TF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)250 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)2.1 A
Maximum drain current (ID)2.1 A
Maximum drain-source on-resistance4.9 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)8.4 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
D-PAK Tape and Reel Data
D-PAK Packaging
Configuration:
Figure 1.0
Packaging Description:
D-PAK parts are shipped in tape. The carrier tape is made
from a dissipative (carbon filled) polycarbonate resin. The
cover tape is a multilayer film (Heat Activated Adhesive in
nature) primarily composed of polyester film, adhesive
layer, sealant, and anti-static sprayed agent. These reeled
parts in standard option are shipped with 2500(TM) /
2000(TF) units per 13” or 330cm diameter reel. The reels
are dark blue or black in color and is made of polystyrene
plastic (anti-static coated). This and some other options
are further described in the Packaging Information
table.These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains three reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Antistatic Cover Tape
Static Dissipative
Embossed Carrier Tape
FKS Label
FG1N60
XFD
115
FG1N60
XFD
115
FG1N60
XFD
115
3 Reels per box
D-PAK Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Inner Box Dimension (mm)
Max qty per Box
Max qty per Box
Weight per unit (gm)
Weight per Reel(kg)
Note/Comments
Standard
( TF / X )
TNR
2,000
13” Dia
339x352x68
6,000
24,000
0.2986
-
Standard
( TM / XM )
TNR
2,500
13” Dia
339x352x68
7,500
30,000
0.2986
-
D-PAK Unit Orientation
FKS Label
Outer Box Dimension (mm)
390x370x310 390x370x310
339mm x 352mm x 68mm
Inner box(6,000cap)
Inner Box Barcode Label Sample
LOT:
PART ID:
D/C1:0211
D/C2:
QTY1:
QTY2:
Outer Box Barcode Label Sample
PART ID :
LOT NO :
QTY
:
0138
2002/ 03 /17
07:30:00
BG:FKS-IT
AR
QTY:
SPEC:
SPEC REV:
CPN:
2002/ 03 /17
07:30:00
BG:SA
M110020004
(BBX)1.0
FAIRCHILD SEMICONDUCTOR CORPORATION.
(F63TNR)3.2
FAIRCHILD SEMICONDUCTOR CORPORATION.
FKS Label
390mm x 370mm x 310mm
Outer box(24,000cap)
D-PAK Tape Leader and Trailer
Configuration:
Figure 2.0
Carrier Tape
Cover Tape
Trailer Tape
360mm minimum or
45 empty pockets
Components
Leader Tape
1520mm minimum or
190 empty pockets
©2003 Fairchild Semiconductor Corporation
September 2003, Rev. C1
FG1N60
XFD
115
TF/X
FG1N60
XFD
115
FG1N60
XFD
115
FG1N60
XFD
115
FG1N60
XFD
115
TM/XM

FQD3P50TF Related Products

FQD3P50TF FQD10N20TM FQD2N50TM FQD1N50TM
Description MOSFET 200V N-Channel QFET MOSFET 500V N-Channel QFET MOSFET 500V N-Channel QFET
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE Single
Is it Rohs certified? conform to conform to conform to -
Maker Fairchild Fairchild Fairchild -
Parts packaging code TO-252 TO-252 TO-252 -
package instruction SMALL OUTLINE, R-PSSO-G2 DPAK-3 DPAK-3 -
Contacts 3 3 3 -
Reach Compliance Code not_compliant not_compliant not_compliant -
Avalanche Energy Efficiency Rating (Eas) 250 mJ 180 mJ 120 mJ -
Shell connection DRAIN DRAIN DRAIN -
Minimum drain-source breakdown voltage 500 V 200 V 500 V -
Maximum drain current (Abs) (ID) 2.1 A 7.6 A 1.6 A -
Maximum drain current (ID) 2.1 A 7.6 A 1.6 A -
Maximum drain-source on-resistance 4.9 Ω 0.36 Ω 5.3 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-252 TO-252 TO-252 -
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 -
JESD-609 code e3 e3 e3 -
Humidity sensitivity level 1 1 1 -
Number of components 1 1 1 -
Number of terminals 2 2 2 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 260 260 -
Polarity/channel type P-CHANNEL N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 50 W 50 W 2.5 W -
Maximum pulsed drain current (IDM) 8.4 A 30.4 A 6.4 A -
Certification status Not Qualified Not Qualified Not Qualified -
surface mount YES YES YES -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) -
Terminal form GULL WING GULL WING GULL WING -
Terminal location SINGLE SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON -

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