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FQD1N50TM

Description
MOSFET 500V N-Channel QFET
Categorysemiconductor    Discrete semiconductor   
File Size397KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FQD1N50TM Overview

MOSFET 500V N-Channel QFET

FQD1N50TM Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerFairchild
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current1.1 A
Rds On - Drain-Source Resistance9 Ohms
Vgs - Gate-Source Voltage30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
Fall Time20 ns
Forward Transconductance - Min0.98 S
Height2.39 mm
Length6.73 mm
Pd - Power Dissipation2.5 W
Rise Time25 ns
Factory Pack Quantity2500
Transistor Type1 N-Channel
TypeMOSFET
Typical Turn-Off Delay Time8 ns
Typical Turn-On Delay Time5 ns
Width6.22 mm
Unit Weight0.139332 oz
D-PAK Tape and Reel Data
D-PAK Packaging
Configuration:
Figure 1.0
Packaging Description:
D-PAK parts are shipped in tape. The carrier tape is made
from a dissipative (carbon filled) polycarbonate resin. The
cover tape is a multilayer film (Heat Activated Adhesive in
nature) primarily composed of polyester film, adhesive
layer, sealant, and anti-static sprayed agent. These reeled
parts in standard option are shipped with 2500(TM) /
2000(TF) units per 13” or 330cm diameter reel. The reels
are dark blue or black in color and is made of polystyrene
plastic (anti-static coated). This and some other options
are further described in the Packaging Information
table.These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains three reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Antistatic Cover Tape
Static Dissipative
Embossed Carrier Tape
FKS Label
FG1N60
XFD
115
FG1N60
XFD
115
FG1N60
XFD
115
3 Reels per box
D-PAK Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Inner Box Dimension (mm)
Max qty per Box
Max qty per Box
Weight per unit (gm)
Weight per Reel(kg)
Note/Comments
Standard
( TF / X )
TNR
2,000
13” Dia
339x352x68
6,000
24,000
0.2986
-
Standard
( TM / XM )
TNR
2,500
13” Dia
339x352x68
7,500
30,000
0.2986
-
D-PAK Unit Orientation
FKS Label
Outer Box Dimension (mm)
390x370x310 390x370x310
339mm x 352mm x 68mm
Inner box(6,000cap)
Inner Box Barcode Label Sample
LOT:
PART ID:
D/C1:0211
D/C2:
QTY1:
QTY2:
Outer Box Barcode Label Sample
PART ID :
LOT NO :
QTY
:
0138
2002/ 03 /17
07:30:00
BG:FKS-IT
AR
QTY:
SPEC:
SPEC REV:
CPN:
2002/ 03 /17
07:30:00
BG:SA
M110020004
(BBX)1.0
FAIRCHILD SEMICONDUCTOR CORPORATION.
(F63TNR)3.2
FAIRCHILD SEMICONDUCTOR CORPORATION.
FKS Label
390mm x 370mm x 310mm
Outer box(24,000cap)
D-PAK Tape Leader and Trailer
Configuration:
Figure 2.0
Carrier Tape
Cover Tape
Trailer Tape
360mm minimum or
45 empty pockets
Components
Leader Tape
1520mm minimum or
190 empty pockets
©2003 Fairchild Semiconductor Corporation
September 2003, Rev. C1
FG1N60
XFD
115
TF/X
FG1N60
XFD
115
FG1N60
XFD
115
FG1N60
XFD
115
FG1N60
XFD
115
TM/XM

FQD1N50TM Related Products

FQD1N50TM FQD10N20TM FQD2N50TM FQD3P50TF
Description MOSFET 500V N-Channel QFET MOSFET 200V N-Channel QFET MOSFET 500V N-Channel QFET
Configuration Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Is it Rohs certified? - conform to conform to conform to
Maker - Fairchild Fairchild Fairchild
Parts packaging code - TO-252 TO-252 TO-252
package instruction - DPAK-3 DPAK-3 SMALL OUTLINE, R-PSSO-G2
Contacts - 3 3 3
Reach Compliance Code - not_compliant not_compliant not_compliant
Avalanche Energy Efficiency Rating (Eas) - 180 mJ 120 mJ 250 mJ
Shell connection - DRAIN DRAIN DRAIN
Minimum drain-source breakdown voltage - 200 V 500 V 500 V
Maximum drain current (Abs) (ID) - 7.6 A 1.6 A 2.1 A
Maximum drain current (ID) - 7.6 A 1.6 A 2.1 A
Maximum drain-source on-resistance - 0.36 Ω 5.3 Ω 4.9 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-252 TO-252 TO-252
JESD-30 code - R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code - e3 e3 e3
Humidity sensitivity level - 1 1 1
Number of components - 1 1 1
Number of terminals - 2 2 2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260 260
Polarity/channel type - N-CHANNEL N-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) - 50 W 2.5 W 50 W
Maximum pulsed drain current (IDM) - 30.4 A 6.4 A 8.4 A
Certification status - Not Qualified Not Qualified Not Qualified
surface mount - YES YES YES
Terminal surface - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form - GULL WING GULL WING GULL WING
Terminal location - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON

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