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1N1186

Description
USB Interface IC USB Device Controler w/ Parallel Bus IC
CategoryDiscrete semiconductor    diode   
File Size717KB,4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
Environmental Compliance
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1N1186 Overview

USB Interface IC USB Device Controler w/ Parallel Bus IC

1N1186 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGeneSiC
package instructionO-MUPM-D1
Reach Compliance Codecompliant
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-5
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current595 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature190 °C
Minimum operating temperature-65 °C
Maximum output current35 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
Maximum reverse current10 µA
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
1N1183 thru 1N1187R
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 50 to 300 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
DO-5 Package
V
RRM
= 50 V - 300 V
I
F
= 35 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive p
p
peak reverse voltage
g
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤ 140 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R)
50
35
50
35
595
-55 to 150
-55 to 150
100
70
100
35
595
-55 to 150
-55 to 150
200
140
200
35
595
-55 to 150
-55 to 150
300
210
300
35
595
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 35 A, T
j
= 25 °C
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 140 °C
1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R)
1.2
10
10
0.25
1.2
10
10
0.25
1.2
10
10
0.25
1.2
10
10
0.25
Unit
V
μA
mA
°C/W
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1

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Description USB Interface IC USB Device Controler w/ Parallel Bus IC Audio Indicators u0026 Alerts 3VDC 30MA 80DBA 2700HZ MOSFET 190 Amp 100 Volt Rectifiers 50V 40A Std. Recovery Rectifiers 100V 35A REV Leads Std. Recovery Rectifiers 100V 40A Std. Recovery
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Maker GeneSiC GeneSiC GeneSiC GeneSiC GeneSiC GeneSiC
package instruction O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Reach Compliance Code compliant compliant compliant compliant compliant compliant
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE ANODE CATHODE ANODE ANODE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.1 V 1.2 V 1.1 V 1.2 V 1.1 V
JEDEC-95 code DO-5 DO-5 DO-5 DO-5 DO-5 DO-5
JESD-30 code O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
Maximum non-repetitive peak forward current 595 A 800 A 595 A 800 A 595 A 800 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 1 1 1 1 1 1
Maximum operating temperature 190 °C 200 °C 190 °C 200 °C 190 °C 200 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 35 A 40 A 35 A 40 A 35 A 40 A
Package body material METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Maximum repetitive peak reverse voltage 200 V 100 V 200 V 50 V 100 V 100 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA
surface mount NO NO NO NO NO NO
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER
Is Samacsys - N - N N N
Base Number Matches - 1 - 1 1 1
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