1N1186R datasheet, PDF - EEWORLD Datasheet

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1N1186R: DescriptionMOSFET 190 Amp 100 Volt; CategoryDiscrete semiconductor diode; File Size717KB，4 Pages; ManufacturerGeneSiC; Websitehttp://www.genesicsemi.com/; Environmental Compliance

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1N1186R Overview

MOSFET 190 Amp 100 Volt

1N1186R Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	GeneSiC
package instruction	O-MUPM-D1
Reach Compliance Code	compliant
application	GENERAL PURPOSE
Shell connection	ANODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JEDEC-95 code	DO-5
JESD-30 code	O-MUPM-D1
Maximum non-repetitive peak forward current	595 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	190 °C
Minimum operating temperature	-65 °C
Maximum output current	35 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	10 µA
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED

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1N1183 thru 1N1187R

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types from 50 to 300 V V

RRM

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

DO-5 Package

RRM

= 50 V - 300 V

= 35 A

Maximum ratings, at T

= 25 °C, unless otherwise specified

Parameter

Repetitive p

peak reverse voltage

RMS reverse voltage

DC blocking voltage

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

Operating temperature

Storage temperature

Symbol

RRM

RMS

F,SM

stg

≤ 140 °C

= 25 °C, t

= 8.3 ms

Conditions

1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R)

595

-55 to 150

100

595

-55 to 150

200

140

200

595

-55 to 150

300

210

300

595

-55 to 150

Unit

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Diode forward voltage

Reverse current

Symbol

Conditions

= 35 A, T

= 25 °C

= 50 V, T

= 25 °C

= 50 V, T

= 140 °C

1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R)

1.2

0.25

1.2

0.25

1.2

0.25

1.2

0.25

Unit

μA

°C/W

Thermal characteristics

Thermal resistance, junction -

case

thJC

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

1N1186R Related Products

	1N1186R	1N1186	1N1184A	1N1183A	1N1184R	1N1184AR
Description	MOSFET 190 Amp 100 Volt	USB Interface IC USB Device Controler w/ Parallel Bus IC	Audio Indicators u0026 Alerts 3VDC 30MA 80DBA 2700HZ	Rectifiers 50V 40A Std. Recovery	Rectifiers 100V 35A REV Leads Std. Recovery	Rectifiers 100V 40A Std. Recovery
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Maker	GeneSiC	GeneSiC	GeneSiC	GeneSiC	GeneSiC	GeneSiC
package instruction	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ANODE	CATHODE	CATHODE	CATHODE	ANODE	ANODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V	1.1 V	1.1 V	1.2 V	1.1 V
JEDEC-95 code	DO-5	DO-5	DO-5	DO-5	DO-5	DO-5
JESD-30 code	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1
Maximum non-repetitive peak forward current	595 A	595 A	800 A	800 A	595 A	800 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	1	1	1	1	1	1
Maximum operating temperature	190 °C	190 °C	200 °C	200 °C	190 °C	200 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	35 A	35 A	40 A	40 A	35 A	40 A
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	200 V	200 V	100 V	50 V	100 V	100 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Is Samacsys	-	-	N	N	N	N
Base Number Matches	-	-	1	1	1	1

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