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BC63916 — NPN Epitaxial Silicon Transistor
November 2015
BC63916
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
TO-92
12
1
1. Emitter
2. Collector
3. Base
3
2
3
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
BC63916_D74Z
BC63916_D27Z
Top Mark
BC639-16
BC639-16
Package
TO-92 3L
TO-92 3L
Packing Method
Ammo
Tape and Reel
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CER
V
CES
V
CEO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Parameter
Collector-Emitter Voltage at R
BE
= 1 kΩ
Value
100
100
80
5
1
-55 to 150
Unit
V
V
V
V
A
°C
Operating and Storage Junction Temperature Range
Note:
1. Pulse test: pulse width
≤
300
μs,
duty cycle
≤
2.0%.
© 2003 Fairchild Semiconductor Corporation
BC63916 Rev. 1.3
www.fairchildsemi.com
BC63916 — NPN Epitaxial Silicon Transistor
Thermal Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Power Dissipation
Derate Above T
A
= 25°C
Parameter
Value
830
6.6
150
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction to Ambient
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
1
h
FE
2
h
FE
3
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Conditions
I
C
= 100
μA,
I
E
= 0
I
C
= 10 mA, I
B
= 0
I
E
= 10
μA,
I
C
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 2 V, I
C
= 5 mA
V
CE
= 2 V, I
C
= 150 mA
V
CE
= 2 V, I
C
= 500 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 2 V, I
C
= 500 mA
V
CE
= 5 V, I
C
= 10 mA,
f = 50 MHz
Min.
100
80
5.0
Typ.
Max.
Unit
V
V
V
100
10
25
100
25
0.5
1
100
250
nA
μA
V
V
MHz
© 2003 Fairchild Semiconductor Corporation
BC63916 Rev. 1.3
www.fairchildsemi.com
2
BC63916 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
250
V
CE
= 2 V
V
BE(ON)
- BASE-EMITTER ON VOLTAGE (V)
1.2
V
CE
= 2 V
h
FE
- DC CURRENT GAIN
200
T
A
= 25 C
o
1.0
T
A
= 100 C
o
T
A
= 100 C
o
T
A
= 150 C
o
T
A
= 150 C
o
0.8
0.6
0.4
0.2
0.0
1E-3
T
A
= -55 C
o
150
T
A
= 0 C
o
100
T
A
= -55 C
o
T
A
= 0 C
o
T
A
= 25 C
o
50
0
1E-3
0.01
0.1
1
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
I
C
- COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. Base-Emitter On Voltage
1
I
C
= 10I
B
10
V
BE(SAT)
- BASE-EMITTER SATURATION
I
C
= 10I
B
V
CE(SAT)
- COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
VOLTAGE (V)
1
0.01
1E-3
0.01
0.1
1
0.1
1E-3
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
I
C
- COLLECTOR CURRENT (A)
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
© 2003 Fairchild Semiconductor Corporation
BC63916 Rev. 1.3
www.fairchildsemi.com
3
Power technology
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