S6JR datasheet, PDF - EEWORLD Datasheet

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S6JR: CategoryDiscrete semiconductor diode; File Size776KB，4 Pages; ManufacturerGeneSiC; Websitehttp://www.genesicsemi.com/

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S6JR Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	GeneSiC
package instruction	O-MUPM-D1
Reach Compliance Code	compliant
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	ANODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-203AA
JESD-30 code	O-MUPM-D1
Maximum non-repetitive peak forward current	167 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	6 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	10 µA
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER

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S6B thru S6JR

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types from 100 V to 600 V V

RRM

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

DO-4 Package

RRM

= 100 V - 600 V

= 6 A

Maximum ratings, at T

= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Parameter

Repetitive p

peak reverse voltage

RMS reverse voltage

DC blocking voltage

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

Operating temperature

Storage temperature

Symbol

RRM

RMS

F,SM

stg

≤ 160 °C

= 25 °C, t

= 8.3 ms

Conditions

S6B (R)

100

167

-55 to 150

S6D (R)

200

140

200

167

-55 to 150

S6G (R)

400

280

400

167

-55 to 150

S6J (R)

600

420

600

167

-55 to 150

Unit

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Diode forward voltage

Reverse current

Symbol

Conditions

= 6 A, T

= 25 °C

= 100 V, T

= 25 °C

= 100 V, T

= 175 °C

S6B (R)

1.1

2.50

S6D (R)

1.1

2.50

S6G (R)

1.1

2.50

S6J (R)

1.1

2.50

Unit

μA

°C/W

Thermal characteristics

Thermal resistance, junction -

case

thJC

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

S6JR Related Products

	S6JR	S6BR	S6J	S6GR
Description		Rectifiers 100V 6A REV Leads Std. Recovery	Rectifiers 600V 6A Std. Recovery	Rectifiers 400V 6A REV Leads Std. Recovery
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Maker	GeneSiC	GeneSiC	GeneSiC	GeneSiC
package instruction	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1
Reach Compliance Code	compliant	compliant	compliant	compliant
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ANODE	ANODE	CATHODE	ANODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V
JEDEC-95 code	DO-203AA	DO-203AA	DO-203AA	DO-203AA
JESD-30 code	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1
Maximum non-repetitive peak forward current	167 A	167 A	167 A	167 A
Number of components	1	1	1	1
Phase	1	1	1	1
Number of terminals	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	6 A	6 A	6 A	6 A
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	600 V	100 V	600 V	400 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA
surface mount	NO	NO	NO	NO
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG
Terminal location	UPPER	UPPER	UPPER	UPPER

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