BSD235N
OptiMOS 2 Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
™
Product Summary
V
DS
R
DS(on),max
V
GS
=4.5 V
V
GS
=2.5 V
I
D
20
350
600
0.95
A
V
mW
PG-SOT-363
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
1
2
3
6
5
4
Type
BSD235N
Package
Tape and Reel Information
Marking
X6s
Lead Free
Yes
Packing
Non dry
PG-SOT-363 H6327: 3000 pcs/ reel
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
1)
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=0.95 A,
R
GS
=16
W
Value
0.95
0.76
3.8
1.6
mJ
Unit
A
Reverse diode dv /dt
dv /dt
I
D
=0.95 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
6
kV/µs
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
(1)
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±12
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
Remark: only one of both transistors in operation.
Rev 2.5
page 1
2014-07-29
BSD235N
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - ambient
Values
typ.
max.
Unit
R
thJA
minimal footprint
(2)
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
V
(BR)DSS
V
GS
=0 V,
I
D
=250 µA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=1.6 µA
V
DS
=20 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=20 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=12 V,
V
DS
=0 V
V
GS
=2.5 V,
I
D
=0.29 A
20
0.7
-
-
0.95
-
-
1.2
1
mA
V
-
-
-
-
-
415
100
100
600
nA
mW
V
GS
=4.5 V,
I
D
=0.95 A
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.76 A
-
266
350
Transconductance
g
fs
2
-
S
2)
Performed on 40 mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB
Rev 2.5
page 2
2014-07-29
BSD235N
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=0.95 A,
T
j
=25 °C
V
R
=10 V,
I
F
=0.95 A,
di
F
/dt =100 A/µs
-
T
A
=25 °C
-
-
-
-
-
0.9
5.2
0.97
3.8
1.2
-
-
V
ns
nC
-
0.5
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=10 V,
I
D
=0.95 A,
V
GS
=0 to 4.5 V
-
-
-
-
0.11
0.07
0.32
2.4
-
-
-
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=10 V,
V
GS
=4.5 V,
I
D
=0.95 A,
R
G,ext
=6
W
V
GS
=0 V,
V
DS
=10 V,
f
=1 MHz
-
-
-
-
-
-
-
49
23
3.2
3.8
3.6
4.5
1.2
63
32
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Rev 2.5
page 3
2014-07-29
BSD235N
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥4.5 V
1
0.5
0.75
0.375
P
tot
[W]
I
D
[A]
0.25
0.5
0.125
0.25
0
0
40
80
120
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
3
10
0
1 ms
10 ms
100 µs
0.5
10
2
0.2
10
-1
DC
Z
thJA
[K/W]
I
D
[A]
0.1
0.05
0.01
10 µs
10
1
single pulse
10
-2
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev 2.5
page 4
2014-07-29
BSD235N
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
4
4.5 V
3.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
600
3
3V
500
2.2 V
2.5 V
3V
2
R
DS(on)
[mW]
400
I
D
[A]
3.5 V
300
4.5 V
6V
2.5 V
200
1
2.3 V
100
2V
0
0
1
2
3
0
0
1
2
3
4
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
4
0.5
25 °C
g
fs
[S]
2
0
3
0
I
D
[A]
0.25
150 °C
0
0
1
2
2
4
6
V
GS
[V]
I
D
[A]
Rev 2.5
page 5
2014-07-29
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