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2N5191

Description
4.0 A, 60 V NPN Bipolar Power Transistor, TO-225, 500-BLKBX
CategoryDiscrete semiconductor    The transistor   
File Size132KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2N5191 Overview

4.0 A, 60 V NPN Bipolar Power Transistor, TO-225, 500-BLKBX

2N5191 Parametric

Parameter NameAttribute value
Brand Nameonsemi
Is it lead-free?Contains lead
Objectid1902632242
Parts packaging codeTO-225
package instructionCASE 77-09, 3 PIN
Contacts3
Manufacturer packaging code77-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys DescriptionBipolar Transistors - BJT 4A 60V 40W NPN
Samacsys Manufactureronsemi
Samacsys Modified On2023-03-07 16:10:32
YTEOL0
Maximum collector current (IC)4 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)2 MHz
2N5190G, 2N5191G,
2N5192G
Silicon NPN Power
Transistors
Silicon NPN power transistors are for use in power amplifier and
switching circuits − excellent safe area limits. Complement to PNP
2N5194, 2N5195.
Features
http://onsemi.com
Epoxy Meets UL 94 V−0 @ 0.125 in.
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
2N5190G
2N5191G
2N5192G
Collector−Base Voltage
2N5190G
2N5191G
2N5192G
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CEO
40
60
80
V
CBO
40
60
80
V
EBO
I
C
I
B
P
D
40
320
T
J
, T
stg
HBM
MM
–65 to +150
3B
C
W
mW/°C
°C
V
V
5.0
4.0
1.0
Vdc
Adc
Adc
Vdc
Value
Unit
Vdc
4.0 AMPERES
NPN SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS − 40 WATTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
YWW
2
N519xG
Y
= Year
WW
= Work Week
2N519x = Device Code
x = 0, 1, or 2
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
3.12
Unit
°C/W
ORDERING INFORMATION
Device
2N5190G
2N5191G
2N5192G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 15
Publication Order Number:
2N5191/D

2N5191 Related Products

2N5191 2N5190G
Description 4.0 A, 60 V NPN Bipolar Power Transistor, TO-225, 500-BLKBX
Brand Name onsemi ON Semiconductor
Is it lead-free? Contains lead Lead free
Parts packaging code TO-225 TO-225AA
package instruction CASE 77-09, 3 PIN ROHS COMPLIANT, CASE 77-09, 3 PIN
Contacts 3 3
Manufacturer packaging code 77-09 77-09
Reach Compliance Code not_compliant compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 4 A 4 A
Collector-emitter maximum voltage 60 V 40 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10 10
JEDEC-95 code TO-225AA TO-225AA
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 140 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 235 260
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 40 W 40 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 2 MHz 2 MHz
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