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BSC0902NSATMA1

Description
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 2200pF 50volts C0G 5%
CategoryDiscrete semiconductor    The transistor   
File Size756KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC0902NSATMA1 Overview

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 2200pF 50volts C0G 5%

BSC0902NSATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)40 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)24 A
Maximum drain-source on-resistance0.0035 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BSC0902NS
OptiMOS
Features
TM
Power-MOSFET
Product Summary
V
DS
R
DS(on),max
I
D
Q
OSS
Q
G
(0V..10V)
30
2.6
100
16
26
V
mW
A
nC
nC
• Optimized for high performance Buck converter
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-TDSON-8
Type
BSC0902NS
Package
PG-TDSON-8
Marking
0902NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
100
67
91
58
Unit
A
24
400
50
40
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=40 A,
R
GS
=25
W
J-STD20 and JESD22
Rev. 2.2
page 1
2013-05-14

BSC0902NSATMA1 Related Products

BSC0902NSATMA1 BSC0902NSIATMA1
Description Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 2200pF 50volts C0G 5% MOSFET LV POWER MOS
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? conform to conform to
package instruction SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5
Contacts 8 8
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 40 mJ 20 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 24 A 23 A
Maximum drain-source on-resistance 0.0035 Ω 0.0037 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-F5 R-PDSO-F5
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 5 5
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 400 A 400 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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