EDB102S datasheet, PDF - EEWORLD Datasheet

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EDB102S: Description1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size28KB，2 Pages; ManufacturerRectron Semiconductor; Websitehttp://www.rectron.com/; Environmental Compliance

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EDB102S Overview

1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

EDB102S Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rectron Semiconductor
package instruction	R-PDSO-G4
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Minimum breakdown voltage	100 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	30 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	265
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.035 µs
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

EDB101S

THRU

EDB106S

GLASS PASSIVATED SUPER FAST

SILICON SURFACE MOUNT BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere

FEATURES

*

Surge overloading rating - 50 amperes peak

Ideal for printed circuit board

Reliable low cost construction utilizing molded

Glass passivated device

Polarity symbols molded on body

Mounting position: Any

Weight: 1.0 gram

DB-S

.310 (7.9)

.290 (7.4)

.255 (6.5)

.245 (6.2)

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

.042 (1.1)

.038 (1.0)

.013 (.330)

.003 (.076)

.410 (10.4)

.360 (9.4)

.009

(9.4)

.060 (1.524)

.040 (1.016)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

o

.335 (8.51)

.320 (8.13)

.135 (3.4)

.115 (2.9)

.205 (5.2)

.195 (5.0)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS

(At T

A

= 25

o

C unless otherwise noted)

RATINGS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Volts

Maximum DC Blocking Voltage

Maximum Average Forward Current

o

at T

A

= 55 C

Peak Forward Surge Current I

FM

(surge): 8.3 ms single half

sine-wave superimposed on rated load (JEDEC method)

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

SYMBOL

V

RRM

V

RMS

V

DC

I

O

I

FSM

C

J

T

J

, T

STG

15

-65 to + 150

EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S

50

35

50

100

70

100

150

105

150

1.0

30

10

200

140

200

300

210

300

400

280

400

UNITS

Volts

Amps

pF

0

C

ELECTRICAL CHARACTERISTICS

(At T

A

= 25 C unless otherwise noted)

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Maximum Reverse Recovery Time (Note 1)

NOTES : 1. Test Conditions: I

F

=0.5A, I

R

=-1.0A, I

RR

=-0.25A.

2. Measured at 1 MH

Z

and applied reverse voltage of 4.0 volts.

@T

A

= 25

o

C

@T

A

=150 C

trr

o

SYMBOL

V

F

I

R

EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S

1.0

1.25

5.0

UNITS

Volts

uAmps

50

nSec

2001-4

EDB102S Related Products

	EDB102S	EDB104S	EDB105S	EDB101S
Description	1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
package instruction	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Contacts	4	4	4	4
Reach Compliance Code	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	100 V	200 V	300 V	50 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V	0.95 V	1.2 V	0.95 V
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A
Number of components	4	4	4	4
Phase	1	1	1	1
Number of terminals	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	1 A	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	265	265	265	265
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	100 V	200 V	300 V	50 V
Maximum reverse recovery time	0.035 µs	0.035 µs	0.035 µs	0.035 µs
surface mount	YES	YES	YES	YES
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	Rectron Semiconductor	-	Rectron Semiconductor	Rectron Semiconductor

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