EDI8G32259V20MNC datasheet, PDF

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EDI8G32259V20MNC: DescriptionSRAM Module, 256KX32, 20ns, CMOS, PSMA72,; Categorystorage storage; File Size319KB，7 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI8G32259V20MNC Overview

SRAM Module, 256KX32, 20ns, CMOS, PSMA72,

EDI8G32259V20MNC Parametric

Parameter Name	Attribute value
Maker	EDI [Electronic devices inc.]
Reach Compliance Code	unknown
Maximum access time	20 ns
I/O type	COMMON
JESD-30 code	R-PSMA-N72
memory density	8388608 bit
Memory IC Type	SRAM MODULE
memory width	32
Number of terminals	72
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SIMM
Encapsulate equivalent code	SSIM72
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	17.272 mm
Maximum standby current	0.04 A
Minimum standby current	3 V
Maximum slew rate	1.44 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	SINGLE
Base Number Matches	1

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Description	SRAM Module, 256KX32, 20ns, CMOS, PSMA72,	SRAM Module, 256KX32, 20ns, CMOS, PSMA72,	SRAM Module, 256KX32, 12ns, CMOS, PSMA72,	SRAM Module, 256KX32, 15ns, CMOS, PSMA72,	SRAM Module, 256KX32, 15ns, CMOS, PSMA72,	SRAM Module, 256KX32, 12ns, CMOS, PSMA72,
Maker	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	20 ns	20 ns	12 ns	15 ns	15 ns	12 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PSMA-N72	R-PSMA-N72	R-PSMA-N72	R-PSMA-N72	R-PSMA-N72	R-PSMA-N72
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	32	32	32	32	32	32
Number of terminals	72	72	72	72	72	72
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX32	256KX32	256KX32	256KX32	256KX32	256KX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SIMM	SIMM	SIMM	SIMM	SIMM	SIMM
Encapsulate equivalent code	SSIM72	SSIM72	SSIM72	SSIM72	SSIM72	SSIM72
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	17.272 mm	15.24 mm	15.24 mm	17.272 mm	15.24 mm	17.272 mm
Maximum standby current	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A
Minimum standby current	3 V	3 V	3 V	3 V	3 V	3 V
Maximum slew rate	1.44 mA	1.44 mA	1.44 mA	1.44 mA	1.44 mA	1.44 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Base Number Matches	1	1	1	1	1	1

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