EFM103 datasheet, PDF - EEWORLD Datasheet

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EFM103: Description1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC; CategoryDiscrete semiconductor diode; File Size55KB，2 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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EFM103 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC

EFM103 Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	R-PDSO-C2
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	150 V
Maximum reverse recovery time	0.035 µs
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL

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LESHAN RADIO COMPANY, LTD.

EFM101 – EFM106

1A

1A FAST RECOVERY SMA DIODES

Marking

V

RRM

(V)

Package

Dimensions

TYPE

I

F

(A)

V

F

(V)

I

RMI

(µA)

I

P8M

(A)

T

rr

(ns)

EFM101

EFM102

EFM103

EFM104

EFM105

EFM106

EF1

EF2

EF3

EF4

EF5

EF6

50

100

150

200

300

400

1.0

0.95

1.25

5.0

30

35

DO – 214AC

Trr

I

F

=1A, I

R

= 0.5A, I

RR

= 0.25A

Trr Test Conditions: I

F

= 1A, I

R

= 0.5A, I

RR

= 0.25A

G

B

A

H

A

.110(2.8)

.086(2.2)

E

F

D

C

B

.067(1.7)

.051(1.3)

C

.008 MAX

(.2)

D

.091(2.3)

.067(1.7)

E

.051(1.3)

.008(0.2)

F

.059(1.5)

.035(0.9)

G

.209(5.3)

.185(4.7)

H

.059(1.5)

.035(0.9)

DO – 214AC

50A–1/2

EFM103 Related Products

	EFM103	EFM101	EFM102	EFM105	EFM106
Description	1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC
Maker	LRC	LRC	LRC	LRC	LRC
package instruction	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Reach Compliance Code	unknow	unknow	unknown	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V	0.95 V	0.95 V	1.25 V	1.25 V
JEDEC-95 code	DO-214AC	DO-214AC	DO-214AC	DO-214AC	DO-214AC
JESD-30 code	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum repetitive peak reverse voltage	150 V	50 V	100 V	300 V	400 V
Maximum reverse recovery time	0.035 µs	0.035 µs	0.035 µs	0.035 µs	0.035 µs
surface mount	YES	YES	YES	YES	YES
Terminal form	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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