DTC314TU / DTC314TK / DTC314TS
Transistors
600mA / 15V Digital transistors
(with built-in resistors)
DTC314TU / DTC314TK / DTC314TS
Applications
Muting, Inverter, Interface, Driver
External dimensions
(Unit : mm)
DTC314TU
2.0
0.3
0.9
0.2
0.7
Features
In addition to the features of regular digital transistors,
1) Low saturation voltage, typically V
CE(sat)
=40mV at
I
C
/I
B
=50mA/2.5mA, makes these transistors ideal for
muting circuits.
2) These transistors can be used at high current levels,
I
C
=600mA.
(3)
1.25
(2)
(1)
2.1
0.65 0.65
0.1Min.
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
Abbreviated symbol : H04
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
DTC314TK
2.9
0.4
1.1
0.8
(2)
(1)
1.6
2.8
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
(3)
0.95 0.95
Packaging specifications
Package
Packaging type
Code
Part No.
DTC314TU
DTC314TK
DTC314TS
−
−
−
Basic ordering unit (pieces)
UMT3 SMT3
SPT
0.15
0.3Min.
ROHM : SMT3
EIAJ : SC-59
1.9
Abbreviated symbol : H04
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Taping Taping Taping
T106
3000
T146
3000
−
TP
5000
−
−
DTC314TS
3.0
4.0
2.0
(15Min.)
3Min.
0.45
2.5
5.0
0.5
0.45
ROHM : SPT
EIAJ : SC-72
(1) (2) (3)
Equivalent circuit
Abbreviated symbol : C314TS
(1) Emitter
(2) Collector
(3) Base
C
B
R
1
E
B : Base
C : Collector
E : Emitter
R
1
=10kΩ
Rev.B
1/3
DTC314TU / DTC314TK / DTC314TS
Transistors
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
DTC314TU DTC314TK DTC314TS
Unit
V
V
V
mA
300
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
30
15
5
600
200
150
−55
to
+150
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Output "ON" resistance
∗
Characteristics of built-in transistor
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
∗
R
on
Min.
30
15
5
−
−
−
100
7
−
−
Typ.
−
−
−
−
−
40
250
10
200
1.25
Max.
−
−
−
0.5
0.5
80
600
13
−
−
Unit
V
V
V
µA
µA
mV
−
kΩ
MHz
Ω
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=20V
V
EB
=4V
Conditions
I
C
/I
B
=50mA/2.5mA
V
CE
=5V,
I
C
=50mA
−
V
CE
=10V,
I
E
=−50mA,
f=100MHz
V
I
=7V,
R
L
=1kΩ,
f=1kHz
Rev.B
2/3
DTC314TU / DTC314TK / DTC314TS
Transistors
Electrical characteristic curves
1k
500
DC CURRENT GAIN : h
FE
COLLECTOR SATURATION VOLTAGE : V
CE(set)
(V)
V
CE
=
5V
1
500m
l
C
/l
B
=20
ON RESISTANCE : Ron
(Ω)
100
50
20
10
5
2
1
500m
200m
200
100
50
20
10
5
2
1
1m
2m
5m 10m 20m
50m 100m 200m 500m
200m
100m
50m
20m
10m
5m
2m
1m
1m
2m
5m 10m 20m
50m 100m 200m 500m
Ta=25°C
f=1kHz
R
L
=1kΩ
h
FE
=250(5V/50mA)
Ta=100°C
25°C
−40°C
Ta=100°C
25°C
−40°C
100m
100m 200m 500m 1
2
5
10
20
50 100
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
INPUT VOLTAGE : V
I
(V)
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
Fig.3 "ON" resistance vs. input
voltage
R
on
measurement circuit
IN
R
L
OUT
v
i
V
l
v
0
GND
R
on
=
v
0
×R
L
v
i
-v
0
Fig.4 Output "ON" resistance (R
on
)
measurement circuit
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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