Preliminary
K1S32161CC
Document Title
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0
Initial Draft
Draft Date
July 14, 2003
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 0.0
July 2003
Preliminary
K1S32161CC
2M x 16 bit Page Mode Uni-Transistor CMOS RAM
FEATURES
•
•
•
•
•
UtRAM
GENERAL DESCRIPTION
The K1S32161CC is fabricated by SAMSUNG′s advanced
CMOS technology using one transistor memory cell. The device
support 4 page mode operation, Industrial temperature range
and 48 ball Chip Scale Package for user flexibility of system
design. The device also supports deep power down mode for
low standby current.
Process Technology: CMOS
Organization: 2M x16 bit
Power Supply Voltage: 2.7~3.1V
Three State Outputs
Compatible with Low Power SRAM
•
Support 4 page read mode
•
Package Type: 48-FBGA-6.00x8.00
PRODUCT FAMILY
Product Family
Operating Temp.
Vcc Range
Speed
(t
RC
)
70ns
Power Dissipation
Standby
(I
SB1
, Max.)
100µA
Operating
(I
CC2
, Max.)
40mA
PKG Type
K1S32161CC-I
Industrial(-40~85°C)
2.7~3.1V
48-FBGA-6.00x8.00
PIN DESCRIPTION
1
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
A
LB
OE
A0
A1
A2
CS2
Vcc
Vss
B
I/O9
UB
A3
A4
CS1
I/O1
Row
Addresses
Row
select
Memory array
C
I/O10
I/O11
A5
A6
I/O2
I/O3
D
Vss
I/O12
A17
A7
I/O4
Vcc
I/O
1
~I/O
8
E
Vcc
I/O13
NC
A16
I/O5
Vss
I/O
9
~I/O
16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
F
I/O15
I/O14
A14
A15
I/O6
I/O7
G
I/O16
A19
A12
A13
WE
I/O8
Column Addresses
H
A18
A8
A9
A10
A11
A20
CS1
CS2
OE
WE
UB
48-FBGA: Top View(Ball Down)
Control Logic
Name
Function
Name
Vcc
Vss
UB
LB
NC
Function
Power
Ground
Upper Byte(I/O
9
~
16
)
Lower Byte(I/O
1
~
8
)
No Connection
1)
LB
CS1,CS2 Chip Select Inputs
OE
WE
A
0
~A
20
Output Enable Input
Write Enable Input
Address Inputs
I/O
1
~I/O
16
Data Inputs/Outputs
1) Reserved for future use
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
-2-
Revision 0.0
July 2003
Preliminary
K1S32161CC
POWER UP SEQUENCE
1. Apply power.
2. Maintain stable power(Vcc min.=2.7V) for a minimum 200µs with CS1=high.or CS2=low.
UtRAM
TIMING WAVEFORM OF POWER UP(1)
(CS
1
controlled)
V
CC(Min)
V
CC
Min. 200µs
≈
≈
CS
1
≈ ≈
CS
2
Power Up Mode
POWER UP(1)
Normal Operation
1. After V
CC
reaches V
CC
(Min.), wait 200µs with CS
1
high. Then the device gets into the normal operation.
TIMING WAVEFORM OF POWER UP(2)
(CS
2
controlled)
V
CC(Min)
V
CC
Min. 200µs
≈
≈ ≈
CS
1
CS
2
Power Up Mode
≈
Normal Operation
POWER UP(2)
1. After V
CC
reaches V
CC
(Min.), wait 200µs with CS
2
low. Then the device gets into the normal operation.
-3-
Revision 0.0
July 2003
Preliminary
K1S32161CC
FUNCTIONAL DESCRIPTION
CS1
H
X
1)
X
1)
L
L
L
L
L
L
L
L
CS2
X
1)
L
X
1)
H
H
H
H
H
H
H
H
OE
X
1)
X
1)
X
1)
H
H
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
X
1)
X
1)
H
H
H
H
H
L
L
L
LB
X
1)
X
1)
H
L
X
1)
L
H
L
L
H
L
UB
X
1)
X
1)
H
X
1)
L
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
UtRAM
Power
Standby
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care.(Must be low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.2 to V
CC
+0.3V
-0.2 to 3.6V
1.0
-65 to 150
-40 to 85
Unit
V
V
W
°C
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reli-
ability.
-4-
Revision 0.0
July 2003
Preliminary
K1S32161CC
PRODUCT LIST
Industrial Temperature Product(-40~85°C)
Part Name
K1S32161CC-FI70
Function
48-FBGA, 70ns, 2.9V
UtRAM
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. T
A
=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤20ns.
3. Undershoot: -1.0V in case of pulse width
≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
V
IH
V
IL
Min
2.7
0
2.2
-0.2
3)
Typ
2.9
0
-
-
Max
3.1
0
Vcc+0.3
2)
0.6
Unit
V
V
V
V
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Symbol
Test Conditions
V
IN
=Vss to Vcc
CS=V
IH,
ZZ=V
IH
, OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
Cycle time=1µs, 100% duty, I
IO
=0mA, CS≤0.2V,
ZZ≥Vcc-0.2V, V
IN
≤0.2V
or V
IN
≥V
CC
-0.2V
Cycle time=t
RC
+3t
PC
, I
IO
=0mA, 100% duty, CS=V
IL
, ZZ=V
IH,
V
IN
=V
IL
or V
IH
I
OL
=2.1mA
I
OH
=-1.0mA
CS≥Vcc-0.2V, ZZ≥Vcc-0.2V, Other inputs=Vss to Vcc
Min
-1
-1
-
-
-
2.4
-
Typ
1)
-
-
-
Max
1
1
7
40
Unit
µA
µA
mA
mA
V
V
µA
I
LI
I
LO
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current(CMOS)
V
OL
V
OH
I
SB1
2)
-
-
-
0.4
-
100
1. Typical values are tested at V
CC
=2.9V, T
A
=25°C and not guaranteed.
-5-
Revision 0.0
July 2003
Embedded System
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